mrf6s18100n Freescale Semiconductor, Inc, mrf6s18100n Datasheet

mrf6s18100n

Manufacturer Part Number

mrf6s18100n

Description

Rf Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF6S18100N.pdf (20 pages)

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Bonase Electronics (HK) Co., Limited

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d

multicarrier amplifier applications.

GSM Application

• Typical GSM Performance: V

GSM EDGE Application

• Typical GSM EDGE Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz)

1930- 1990 MHz)

Output Power

Applications

Derate above 25°C

Case Temperature 80°C, 100 CW

Case Temperature 77°C, 40 CW

out

Power Gain — 14.5 dB

Drain Efficiency — 49%

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

Power Gain — 15 dB

Drain Efficiency — 35%

Spectral Regrowth @ 400 kHz Offset = - 63 dBc

Spectral Regrowth @ 600 kHz Offset = - 76 dBc

EVM — 2% rms

= 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or

= 25°C

Characteristic

= 28 Volts, I

Rating

Operation

= 28 Volts, I

= 900 mA, P

= 700 mA,

out

Symbol

DSS

θJC

stg

Document Number: MRF6S18100N

MRF6S18100NR1 MRF6S18100NBR1

MRF6S18100NBR1

MRF6S18100NR1

1805- 1990 MHz, 100 W, 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 1486 - 03, STYLE 1

CASE 1484 - 04, STYLE 1

GSM/GSM EDGE

MRF6S18100NBR1

MRF6S18100NR1

- 65 to +175

TO - 270 WB - 4

Value

TO - 272 WB - 4

- 0.5, +68

- 0.5, +12

Value

1.96

0.51

0.62

343

200

(1,2)

Rev. 1, 5/2006

W/°C

°C/W

Unit

Vdc

°C

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