mrf6s19060n Freescale Semiconductor, Inc, mrf6s19060n Datasheet
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, DD Operation DD Document Number: MRF6S19060N Rev. 3, 5/2006 MRF6S19060NR1 MRF6S19060NBR1 1930- 1990 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 ...
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... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19060NR1 MRF6S19060NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...
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... Microstrip Z9 0.240″ x 1.000″ Microstrip Z10 0.310″ x 0.315″ Microstrip Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values Part C1 100 nF Chip Capacitor C2, C3, C7, C8, C9 6.8 pF Chip Capacitors C4, C5, C6, C10, C11 10 μ ...
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... Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout MRF6S19060NR1 MRF6S19060NBR1 C10 C11 MRF6S19060N/NB Rev Device Data Freescale Semiconductor ...
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... Watts Avg. out = 28 Vdc 1958.75 MHz 1961.25 MHz I = 305 mA 915 mA DQ 458 mA 610 mA 763 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19060NR1 MRF6S19060NBR1 100 200 5 ...
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... C 17 25_C 16 85_C OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19060NR1 MRF6S19060NBR1 6 TYPICAL CHARACTERISTICS 53 51 P1dB = 48.792 dBm (75. 100 Figure 8. Pulse CW Output Power versus Vdc 610 mA − ...
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... MHz Channel BW −IM3 in +IM3 in 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR in 30 kHz +ACPR in 30 kHz Integrated BW Integrated BW −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 14 Carrier N - CDMA Spectrum MRF6S19060NR1 MRF6S19060NBR1 6 7.5 7 ...
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... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19060NR1 MRF6S19060NBR1 Ω load f = 1990 MHz f = 1930 MHz f = 1990 MHz Z source Vdc 610 mA Avg out source load MHz Ω Ω 1930 4.54 - j7.95 4.15 - j5.58 1960 4.33 - j7.74 4.17 - j5.34 1990 4.20 - j7.43 4.22 - j5.10 = Test circuit impedance as measured from source gate to ground ...
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... RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 9 ...
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... MRF6S19060NR1 MRF6S19060NBR1 10 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 11 ...
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... MRF6S19060NR1 MRF6S19060NBR1 12 PACKAGE DIMENSIONS ...
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... RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 13 ...
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... MRF6S19060NR1 MRF6S19060NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 15 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19060NR1 MRF6S19060NBR1 Document Number: MRF6S19060N Rev. 3, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...