mrf6s27085h Freescale Semiconductor, Inc, mrf6s27085h Datasheet

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mrf6s27085h

Manufacturer Part Number
mrf6s27085h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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mrf6s27085hR5
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical Single - Carrier N - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2600 to
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
900 mA, P
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc in 30 kHz Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 20 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
C
= 25°C
Characteristic
Rating
DD
Operation
μ″ Nominal.
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
Document Number: MRF6S27085H
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
MRF6S27085HR3 MRF6S27085HSR3
2600- 2700 MHz, 20 W AVG., 28 V
MRF6S27085HSR3
MRF6S27085HR3
MRF6S27085HSR3
MRF6S27085HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
SINGLE N - CDMA
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
Value
0.50
0.56
350
150
200
2
(1,2)
Rev. 2, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf6s27085h Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Operation DD μ″ Nominal. Document Number: MRF6S27085H Rev. 2, 5/2006 MRF6S27085HR3 MRF6S27085HSR3 2600- 2700 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 ...

Page 2

... MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S27085HR3 MRF6S27085HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Microstrip Z7 0.366″ x 0.490″ Microstrip Z8 0.083″ x 0.490″ Microstrip Z9 0.091″ x 0.753″ Microstrip Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values Part B1 Bead (0805) B2 Bead, Surface Mount C1, C2 4.7 pF Chip Capacitors, B Case C3 3 ...

Page 4

... C11 C10 B2 C8* C9 Components stacked Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout MRF6S27085HR3 MRF6S27085HSR3 B1* L1 MRF6S27085 Rev Device Data Freescale Semiconductor ...

Page 5

... Vdc 1340 mA = 440 mA 1240 mA 900 mA 675 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S27085HR3 MRF6S27085HSR3 100 5 ...

Page 6

... 12.5 10 7.5 5 η 2 2645 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S27085HR3 MRF6S27085HSR3 6 TYPICAL CHARACTERISTICS 100 30 31 Figure 8. Pulse CW Output Power versus ACPR = 28 Vdc 900 mA 2645 MHz ...

Page 7

... FREQUENCY (MHz) MRF6S27085HR3 MRF6S27085HSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 8

... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S27085HR3 MRF6S27085HSR3 8 Z source Z load f = 2600 MHz f = 2700 MHz = 10 Ω Vdc 900 mA Avg out source load MHz Ω Ω 2600 8.55 - j5.42 5.86 - j4.34 2610 8.31 - j5.30 5.69 - j4.26 2620 8.21 - j5.10 5.64 - j4.15 2630 8.21 - j4.85 5.67 - j4.00 2640 8.26 - j4.57 5.72 - j3.83 2645 8.40 - j4.43 5.80 - j3.75 2650 8.44 - j4.32 5.86 - j3.70 2660 8 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF6S27085HR3 MRF6S27085HSR3 9 ...

Page 10

... MRF6S27085HR3 MRF6S27085HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S27085HR3 MRF6S27085HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S27085HR3 MRF6S27085HSR3 Document Number: MRF6S27085H Rev. 2, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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