mrf6s27050h Freescale Semiconductor, Inc, mrf6s27050h Datasheet

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mrf6s27050h

Manufacturer Part Number
mrf6s27050h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2500 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
500 mA, P
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
calculators by product
Select Documentation/Application Notes - AN1955.
out
= 7 Watts Avg., Full Frequency Band, Channel Bandwidth =
.
(1,2)
Characteristic
Rating
DD
Operation
μ″
Nominal.
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S27050H
CASE 465A - 06, STYLE 1
MRF6S27050HR3 MRF6S27050HSR3
CASE 465 - 06, STYLE 1
2500 - 2700 MHz, 7 W AVG., 28 V
MRF6S27050HSR3
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27050HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
Value
0.85
0.98
150
225
(2,3)
Rev. 0, 11/2006
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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