mrf6s21100n Freescale Semiconductor, Inc, mrf6s21100n Datasheet

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mrf6s21100n

Manufacturer Part Number
mrf6s21100n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
out
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 1050 mA,
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
J
Document Number: MRF6S21100N
CASE 1484 - 04, STYLE 1
CASE 1486 - 03, STYLE 1
MRF6S21100NR1 MRF6S21100NBR1
2110 - 2170 MHz, 23 W AVG., 28 V
MRF6S21100NBR1
MRF6S21100NBR1
MRF6S21100NR1
MRF6S21100NR1
TO - 272 WB - 4
TO - 270 WB - 4
LATERAL N - CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
- 65 to +175
2 x W - CDMA
Value
- 0.5, +68
- 0.5, +12
Value
0.57
0.66
200
(1,2)
Rev. 2, 1/2007
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf6s21100n Summary of contents

Page 1

... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1050 mA Operation DD Document Number: MRF6S21100N Rev. 2, 1/2007 MRF6S21100NR1 MRF6S21100NBR1 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 ...

Page 2

... Adjacent Channel Power Ratio Input Return Loss 11/ Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part is internally matched both on input and output. MRF6S21100NR1 MRF6S21100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Microstrip Z4 0.420″ x 0.800″ Microstrip Z5 1.231″ x 0.040″ Microstrip Z6 0.100″ x 0.880″ Microstrip Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead C1 10 μ Tantalum Capacitor C2 0.01 μF Chip Capacitor C3, C4, C10 5 ...

Page 4

... MRF6S21100N/NB, Rev. 3 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout MRF6S21100NR1 MRF6S21100NBR1 C11 C12 C10 RF Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out −9 −24 −10 −26 −28 −11 −12 −30 −13 −32 −34 −14 2240 = 45 Watts Avg. out 1575 525 mA DQ 1312 mA 1050 mA 787 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21100NR1 MRF6S21100NBR1 300 5 ...

Page 6

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100NR1 MRF6S21100NBR1 6 TYPICAL CHARACTERISTICS P1dB = 51.3 dBm (135 100 300 32 Figure 8. Pulsed CW Output Power versus = 28 Vdc 1050 mA 2135 MHz − ...

Page 7

... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 −80 −25 − 230 250 = 25.5%. 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21100NR1 MRF6S21100NBR1 ...

Page 8

... DQ out f Z source MHz Ω 2110 3.51 - j3.78 2140 3.50 - j3.83 2170 3.29 - j3. Input Matching Network Figure 15. Series Equivalent Source and Load Impedance MRF6S21100NR1 MRF6S21100NBR1 2170 MHz = 23 W Avg load MHz Ω 1.62 - j3.54 2110 1.51 - j3.26 2140 1.41 - j2.95 2170 = Test circuit impedance as measured from source gate to gate, balanced configuration. ...

Page 9

... Microstrip Z4 0.090″ x 0.800″ Microstrip Z5 1.500″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead C1 10 μ Tantalum Capacitor C2 0.01 μF Chip Capacitor C3, C4, C10 5 ...

Page 10

... MRF6S21100N/NB, Rev. 3 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — SCDMA MRF6S21100NR1 MRF6S21100NBR1 C10 C11 C12 RF Device Data Freescale Semiconductor ...

Page 11

... Adj − Alt− 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MRF6S21100NR1 MRF6S21100NBR1 11 ...

Page 12

... MHz Figure 22. Series Equivalent Source and Load Impedance — SCDMA MRF6S21100NR1 MRF6S21100NBR1 Ω 1950 MHz f = 2070 MHz Z load f = 1950 MHz Z source Vdc 900 source load MHz W W 1950 1.43 - j4.56 3.61 - j4.19 1960 1.57 - j4.80 3.86 - j4.40 1970 1.72 - j5.12 4.18 - j4.62 1980 1.65 - j5.27 4.21 - j4.81 1990 1.48 - j4.98 3.91 - j4.59 2000 1.38 - j4.45 3.56 - j4.07 2010 1 ...

Page 13

... E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .132 .140 3.35 3.56 E3 .124 .132 3.15 3.35 E4 .270 − − − 6.86 − − − E5 .346 .350 8.79 8.89 F .025 BSC 0.64 BSC b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .106 BSC 2.69 BSC aaa .004 0.10 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF6S21100NR1 MRF6S21100NBR1 13 ...

Page 14

... MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 15 ...

Page 16

... MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description and removed Min and Max value for V GS( Characteristics table to account for the 2 and listed MRF6S21100NR1 MRF6S21100NBR1 17 ...

Page 18

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S21100NR1 MRF6S21100NBR1 Document Number: MRF6S21100N Rev. 2, 1/2007 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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