fll310iq-3a Eudyna Devices Inc, fll310iq-3a Datasheet

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fll310iq-3a

Manufacturer Part Number
fll310iq-3a
Description
High Voltage - High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
1.FLL310IQ-3A.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FLL310IQ-3A
Manufacturer:
ROHM
Quantity:
12 000
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
3rd Order Intermoduation
Distortion
Thermal Resistance
Channel Temperature Rise
Note1: Tested in EUD Test Fixture containing external matching.
Note2: ĢTch=10V x IDSR x Rth
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
Item
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
Item
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Edition 1.1
May 2005
DESCRIPTION
The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull
design which offers excellent linearity, ease of matching, and greater
consistency in covering the frequency band of 2.5 to 2.7GHz.
This new product is ideally suited for use in MMDS design requirements
as it offers high gain, long term reliability and ease of use.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• E P ush-Pull Configuration
• E H igh Power Output:30W
• E E xcellent Linearity
• E S uitable for class A and class AB operation.
• E H igh PAE:40%
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
ESD
Item
Class III
Symbol
Symbol
Symbol
VGSO
Ģ Tch
G1dB
IDSS
P1dB
IDSR
PTot
VDS
T
IGR
Tch
V
V
IGF
IM3
Rth
T
gm
Vp
add
DS
GS
stg
ch
2000 V~
VDS=5V,VGS=0V
VDS=5V,IDS=7.2A
VDS=5V,IDS=720mA
IGS=-720uA
IDS(DC)=7.0A
Note1
f=2.7GHz, ƒ ¢ f=5MHz
2-Tone test
Pout=37.0dBm S.C.L.
Channel to Case
Note2
V
f=2.7GHz
1
DS
=10V
Condition
Condition
RG=25
RG=25
High Voltage - High Power GaAs FET
-65 to +175
Rating
107
175
15
-5
o
Min.
44.0
-1.0
-5.0
C)
8.0
-
-
-
-
-
-
-
o
C)
>-17.4
Limit
<54.4
Limit
Typ. Max.
1200
6000
-40.0
45.0
40.0
145
-2.0
9.0
7.0
1.0
10
CASE STYLE: IQ
-
-
FLL310IQ-3A
o
C)
100.0
1600
-3.5
1.4
-
-
-
-
8
-
-
oC/W
Unit
Unit
Unit
dBm
dBc
mA
mA
mA
mS
dB
o
o
o
o
W
V
V
%
V
V
V
A
C
C
C
C

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fll310iq-3a Summary of contents

Page 1

... E S uitable for class A and class AB operation. • igh PAE:40% DESCRIPTION The FLL310IQ- Watt GaAs FET that employ a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 2.5 to 2.7GHz. This new product is ideally suited for use in MMDS design requirements as it offers high gain, long term reliability and ease of use ...

Page 2

... FLL310IQ-3A High Voltage - High Power GaAs FET 2 ...

Page 3

... FLL310IQ-3A High Voltage - High Power GaAs FET 3 ...

Page 4

... FLL310IQ-3A High Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : GATE 3 : SOURCE 4 : DRAIN 5 : DRAIN 6 : SOURCE Unit:mm 4 ...

Page 5

... Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 FLL310IQ-3A High Voltage - High Power GaAs FET CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • ...

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