fll310lq-3a Eudyna Devices Inc, fll310lq-3a Datasheet
fll310lq-3a
Manufacturer Part Number
fll310lq-3a
Description
High Voltage - High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
1.FLL310LQ-3A.pdf
(5 pages)
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
3rd Order Intermoduation
Distortion
Thermal Resistance
Channel Temperature Rise
Note1: Tested in EUD Test Fixture containing external matching.
Note2: Δ Tch=10V x IDSR x Rth
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
Item
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
Item
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Edition 1.1
May 2005
DESCRIPTION
The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull
design which offers excellent linearity, ease of matching, and greater
consistency in covering the frequency band of 2.5 to 2.7GHz.
This new product is ideally suited for use in MMDS design requirements
as it offers high gain, long term reliability and ease of use.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
・ Push-Pull Configuration
・ High Power Output:30W
・ Excellent Linearity
・ Suitable for class A and class AB operation.
・ High PAE:40%
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
ESD
Item
Class III
Symbol
Symbol
Symbol
VGSO
Δ Tch
G1dB
IDSS
P1dB
IDSR
PTot
VDS
T
IGR
Tch
V
V
IGF
IM3
Rth
T
gm
Vp
add
DS
GS
stg
ch
2000 V~
VDS=5V,VGS=0V
VDS=5V,IDS=7.2A
VDS=5V,IDS=720mA
IGS=-720uA
IDS(DC)=7.0A
Note1
Pout=37.0dBm S.C.L.
Channel to Case
Note2
f=2.7GHz, Δ f=5MHz
2-Tone test
V
f=2.7GHz
1
DS
=10V
Condition
Condition
RG=25
RG=25
High Voltage - High Power GaAs FET
-65 to +175
Rating
107
175
15
-5
o
Min.
44.0
-1.0
-5.0
C)
8.0
-
-
-
-
-
-
-
o
C)
>-17.4
Limit
<54.4
Limit
Typ. Max.
1200
6000
-40.0
45.0
40.0
145
-2.0
9.0
7.0
1.0
10
CASE STYLE: IQ
-
-
FLL310IQ-3A
o
C)
100.0
1600
-3.5
1.4
-
-
-
-
8
-
-
oC/W
Unit
Unit
Unit
dBm
dBc
mA
mA
mA
mS
dB
o
o
o
o
W
V
V
%
V
V
V
A
C
C
C
C
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fll310lq-3a Summary of contents
Page 1
FEATURES ・ Push-Pull Configuration ・ High Power Output:30W ・ Excellent Linearity ・ Suitable for class A and class AB operation. ・ High PAE:40% DESCRIPTION The FLL310IQ- Watt GaAs FET that employ a push-pull design which offers excellent ...
Page 2
FLL310IQ-3A High Voltage - High Power GaAs FET 2 ...
Page 3
High Voltage - High Power GaAs FET 3 FLL310IQ-3A ...
Page 4
FLL310IQ-3A High Voltage - High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : GATE 3 : SOURCE 4 : DRAIN 5 : DRAIN 6 : SOURCE Unit:mm 4 ...
Page 5
... FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 ...