fll1200iu-2 Fujitsu Microelectronics, Inc., fll1200iu-2 Datasheet

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fll1200iu-2

Manufacturer Part Number
fll1200iu-2
Description
L-band Medium & High Power Gaas Fet
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.FLL1200IU-2.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FLL1200IU-2
Manufacturer:
ANAREN
Quantity:
5 000
Edition 1.7
December 1999
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
CASE STYLE: IU
FEATURES
• Push-Pull Configuration
• High Power Output: 120W (Typ.)
• High PAE: 44%.
• Broad Frequency Range: 1800 to 2000 MHz.
• Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in PCS/PCN base station amplifiers
as it offers high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
1. The drain-source operating voltage (V DS ) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0 and -57.6 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145°C.
gate resistance of 10 .
Parameter
Item
Symbol
Symbol
V
V
T
T
V
P
I
I
P
DS
GS
stg
gm
DSR
R
DSS
GL
ch
V
GSO
T
add
out
th
p
V
V
V
I
V
f=1.96 GHz
I
Pin = 41.0dBm
Channel to Case
GS
DS
L-Band Medium & High Power GaAs FET
DS
DS
DS
DS
1
= 5.0A
= -2.88mA
= 5V, V
= 5V, I
= 5V, I
= 12V
Tc = 25°C
Condition
Conditions
DS
DS
GS
= 28.8A
= 2.88A
= 0V
Min.
49.8
10.0
-1.0
-65 to +175
-5
-
-
-
-
-
Rating
FLL1200IU-2
187.5
+175
15
-5
Limits
Typ.
50.8
11.0
-2.0
0.6
48
24
20
44
-
Max.
-3.5
0.8
72
30
-
-
-
-
-
Unit
°C
°C
°C/W
W
dBm
V
V
Unit
dB
%
A
S
V
V
A

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fll1200iu-2 Summary of contents

Page 1

... Broad Frequency Range: 1800 to 2000 MHz. • Suitable for class AB operation. DESCRIPTION The FLL1200IU 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...

Page 2

... FLL1200IU-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 200 150 100 100 Ambient Temperature (° 12V OUTPUT POWER & add vs. INPUT POWER 12V 5. 1.96GHz 50 48 ...

Page 3

... FLL1200IU-2 48 S22 MAG ANG .929 170.6 .920 169.8 .917 168.7 .911 167.8 .907 166.9 .905 166.0 .914 164.8 .928 163.5 .940 160.2 .932 155.8 .886 151 ...

Page 4

... FLL1200IU-2 L-Band Medium & High Power GaAs FET 12-R0.5 6 4-R1.3 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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