fll410lk-4c Eudyna Devices Inc, fll410lk-4c Datasheet

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fll410lk-4c

Manufacturer Part Number
fll410lk-4c
Description
L-band High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
1.FLL410LK-4C.pdf (6 pages)
Edition 1.1
Oct 2003
FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=11.5dB(Typ.)
・High PAE: ηadd=44%(Typ.)
・Broad Band: 3.4~3.7GHz
・Hermetically Sealed Package
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 – 3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
Operating Channel Temperature
Gate-Source Breakdown Voltage
Output Power
Power-added Efficiency
Drain Current
Drain Current
Thermal Resistance
Pinch-off Voltage
Linear Gain *
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Total Power Dissipation
Storage Temperature
Channel Temperature
Gate-Source Voltage
Gate Current
Gate Current
*１：GL is measured at Pin=22.0dBm
Drain-Source Voltage
DC Input Voltage
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
ESD
Item
Item
Item
1
Class Ⅲ
Symbol
V
I
P
G
η
V
DSS
Symbol
I
GSO
R
dsr
add
p
OUT
L
th
V
Tch
I
I
GR
GF
DS
2000V　~
Symbol
V
T
T
V
PT
stg
ch
DS
GS
V
V
I
V
f=3.6 GHz
I
Pin=36.0dBm
GS
Channel to Case
DS
DS
DS
1
DS
Test Conditions
=-1.0mA
=3A
=5V , V
=5V , I
=12V
Ω
Condition
DS
R
)
R
GS
G
G
=100mA
=0V
=5
=5
Ω
L-Band High Power GaAs FET
Ω
-65 to +175
o
45.0
10.5
-0.1
C)
Min.
-5.0
Rating
-
-
-
107.0
-
o
175
15
-5
C)
FLL410IK-4C
Limit
46.0
11.5
Typ.
-0.3
≥-23
≤145
≤117
1.0
Limit
4.0
6.7
≤12
44
o
-
C)
CASE STYLE: IK
-0.5
Max.
1.4
8.7
-
-
-
-
-
o
dBm
Unit
C/W
Unit
dB
mA
mA
o
A
V
V
%
Unit
A
o
V
C
o
W
C
V
V
C

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fll410lk-4c Summary of contents

Page 1

FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK- partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. ...

Page 2

FLL410IK-4C L-Band High Power GaAs FET OUTPUT POWER vs. INPUT POWER VDS=12V, IDS(DC)= 3.3 3.4 3.5 3.6 Frequency [GHz] -20 -24 -28 -32 -36 -40 -44 -48 -52 -56 -60 OUTPUT ...

Page 3

S-PARAMETER +50j +25j +10j -10j 25 10 Ω -25j -50j Freq S11 [GHz] MAG ANG 2.50 0.58 2.60 0.42 2.70 0.25 2.80 0.14 2.90 0.23 -164.13 3.00 0.36 163.77 3.10 ...

Page 4

FLL410IK-4C L-Band High Power GaAs FET ■ BOARD LAYOUT(Reference) <INPUT SIDE> <OUTPUT SIDE> εr=3.5 4 εr=3.5 ε r=3.5 , t=0.6mm Unit : mm ...

Page 5

Package Out Line FLL410IK-4C L-Band High Power GaAs FET 5 PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm ...

Page 6

FLL410IK-4C L-Band High Power GaAs FET 6 ...

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