fll410lk-3c Eudyna Devices Inc, fll410lk-3c Datasheet

fll410lk-3c

Manufacturer Part Number

fll410lk-3c

Description

L-band High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL410LK-3C.pdf (6 pages)

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Edition 1.1

Oct 2003

FEATURES

・High Output Power: Pout=46.0dBm(Typ.)

・High Gain: GL=13.0dB(Typ.)

・High PAE: ηadd=52%(Typ.)

・Broad Band: 2.5~2.7GHz

・Hermetically Sealed Package

DESCRIPTION

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is

designed for use in 2.5 – 2.7 GHz band amplifiers. This new product

is uniquely suited for use in MMDS applications as it offers excellent

linearity, high efficiency, high gain, long term reliability and ease of use.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25

RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25

Gate-Source Breakdown Voltage

Drain Current

*１：GL is measured at Pin=22.0dBm

Operating Channel Temperature

Pinch-off Voltage

Output Power

Power-added Efficiency

Drain Current

Linear Gain　*1

Thermal Resistance

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25

Gate-Source Voltage

Drain-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Gate Current

DC Input Voltage

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k

ESD

Item

Class Ⅲ

Symbol

DSS

GSO

dsr

add

OUT

Symbol

Tch

2000V　~

Symbol

stg

f=2.6 GHz

Pin=35.0dBm

Channel to Case

Test Conditions

=-1.1mA

=3A

=5V, V

=5V, I

=12V

Ω

Condition

)

=110mA

=0V

Ω

L-Band High Power GaAs FET

-65 to +175

45.0

12.0

Min.

-0.1

-5.0

Rating

100

175

-5

FLL410IK-3C

Limit

46.0

13.0

Typ.

-0.3

4.0

5.9

Limit

≥-25

1.3

≤145

≤12

≤88

CASE STYLE: IK

-0.5

Max.

7.6

1.5

Unit

dBm

C/W

Unit

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fll410lk-3c Summary of contents

Page 1

FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK- partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. ...

Page 2

FLL410IK-3C L-Band High Power GaAs FET OUTPUT POWER vs. INPUT POWER VDS=12V, IDS(DC)= 2.35 2.45 2.55 2.65 Frequency [GHz] -20 -24 -28 -32 -36 -40 -44 -48 -52 -56 -60 OUTPUT ...

Page 3

S-PARAMETER +50j +25j +10j -10j 25 10 Ω -25j -50j Freq S11 [GHz] MAG ANG 1.50 0.95 139.13 1.60 0.94 136.13 1.70 0.92 132.48 1.80 0.91 129.08 1.90 0.89 125.19 2.00 0.87 121.65 2.20 ...

Page 4

FLL410IK-3C L-Band High Power GaAs FET ■ BOARD LAYOUT(Reference) <INPUT SIDE> <OUTPUT SIDE> εr=3.5 4 ε εr=3.5 r=3.5, t=0.6mm Unit : mm ...

Page 5

Package Out Line FLL410IK-3C L-Band High Power GaAs FET 5 PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm ...

Page 6

FLL410IK-3C L-Band High Power GaAs FET 6 ...

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