fll400lk-2 Eudyna Devices Inc, fll400lk-2 Datasheet

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fll400lk-2

Manufacturer Part Number
fll400lk-2
Description
High Voltage - High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
Edition 1.1
Augest 2004
FEATURES
・ High Output Power: P1dB=46.5dBm(Typ.)
・ High Gain: G1dB=12.0dB(Typ.)
・ High PAE: add=46%(Typ.)
・ Broad Band: 1.8~2.0GHz
・ Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
for use in PHS base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Thermal Resistance
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
Item
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
Item
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
ESD
Item
Class III
Symbol
Symbol
Symbol
VGSO
G1dB
P1dB
PTot
VDS
T
IGR
Tch
Idsr
V
V
T
IGF
Rth
gm
Vp
add
DS
GS
stg
2000 V~
ch
1
VDS=5V,IDS=8.0A
VDS=5V,IDS=1.08A
IGS=-1.08mA
V
f=1.9GHz
IDS(DC)=4A
DD
Condition
Condition
=12V
RG=10
RG=10
High Voltage - High Power GaAs FET
-65 to +175
Rating
93.7
175
15
-5
o
Min. Typ. Max.
45.5
11.5
-1.0
-5.0
C)
-
-
-
-
o
C)
>-17.4
Limit
<54.4
Limit
46.5
12.0
46.0
145
-2.0
9.0
7.5
1.3
12
-
CASE STYLE: IK
FLL400IK-2
o
C)
-3.5
8.5
1.6
-
-
-
-
-
o
Unit
Unit
Unit
dBm
mA
mA
C/W
dB
o
o
o
W
S
V
V
%
V
V
V
A
C
C
C

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fll400lk-2 Summary of contents

Page 1

FEATURES ・ High Output Power: P1dB=46.5dBm(Typ.) ・ High Gain: G1dB=12.0dB(Typ.) ・ High PAE: add=46%(Typ.) ・ Broad Band: 1.8~2.0GHz ・ Hermetically Sealed Package DESCRIPTION The FLL400IK Watt GaAs FET that is specially suited for use in PHS base ...

Page 2

FLL400IK-2 High Voltage - High Power GaAs FET ■ Package Out Line 2 PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange DRAIN Unit:mm ...

Page 3

... FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 ...

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