ma4sw610b-1 Tyco Electronics, ma4sw610b-1 Datasheet

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ma4sw610b-1

Manufacturer Part Number
ma4sw610b-1
Description
Sp6t Pin Diode Switch With Integrated Bias Network
Manufacturer
Tyco Electronics
Datasheet

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Part Number:
MA4SW610B-1
Manufacturer:
SYNERGY
Quantity:
5 000
Part Number:
MA4SW610B-1
Manufacturer:
MA/COM
Quantity:
20 000
SP6T PIN Diode Switch with
Integrated Bias Network
Features
n
n
n
Description
The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band
switch with integrated bias networks made with M/A-COM’s
HMIC
Patent 5,268,310. This process allows the incorporation of silicon
pedestals that form series and shunt diodes or vias by imbedding
them in low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
through 18 GHz.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control circuits
where high isolation to insertion loss ratios are required. With a
standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns
switching speeds are achieved.
Absolute Maximum Ratings
@ TA = +25 °C (unless otherwise
specified)
1. Exceeding any of these values may result in permanent
damage
Operating Temperature
Storage Temperature
RF C.W. Incident Power
(+/-20 mA)
Bias Current (Forward)
Applied Voltage (Reverse)
Ultra Broad Bandwidth: 2 GHz to 18 GHz
1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz
Reliable. Fully Monolithic, Glass Encapsulated
Construction
TM
(Heterolithic Microwave Integrated Circuit) process, US
Parameter
-65 °C to +125 °C
-65 °C to +150 °C
+ 30 dBm
+/- 40 mA
Value
15 V
1
MA4SW510B-1 Layout
Nominal Chip Dimensions
Chip
RF
DC
B2
B3
B4
B5
B6
B7
J1
J2
J3
J4
J5
J6
J7
Pad Locations Relative to J1
Chip Dimensions ( m)
Pad Dimensions ( m)
Pad Locations ( m)
+1450
+1535
+1535
+1535
-1535
-1535
-1535
-1535
3370
+750
+900
-750
400
125
-50
X
X
X
0
+1000
+1800
+2500
+2820
+2820
+2820
+2820
+1800
+1100
3120
+300
+300
125
125
Y
Y
Y
0
0
V 1.00

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ma4sw610b-1 Summary of contents

Page 1

... Insertion Loss Isolation at 18 GHz n Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW610B Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM’s TM HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass ...

Page 2

... Isolation Low Loss +10 +10 +10 Isolation Isolation -10 +10 +10 Isolation Isolation +10 -10 +10 Isolation Isolation +10 +10 -10 Isolation Isolation MA4SW610B-1 Typical Maximum 1.0 1.4 1.3 2.0 1.9 2 Condition of RF Output J4-J1 J5-J1 J6-J1 Isolation Isolation Isolation Isolation Isolation ...

Page 3

... Visit www.macom.com for additional data sheets and product information. TYPICAL INSERTION LOSS 0.00 -1.00 -2.00 -3.00 -4.00 -5.00 2.00 4.00 6.00 8.00 10.00 FREQUENCY ( GHz ) TYPICAL ISOLATION 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 2.00 4.00 6.00 8.00 10.00 FREQUENCY ( GHz ) MA4SW610B-1 12.00 14.00 16.00 18. 12.00 14.00 16.00 18. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 3 ...

Page 4

... Visit www.macom.com for additional data sheets and product information. TYPICAL INPUT RETURN LOSS 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 2.00 4.00 6.00 8.00 10.00 FREQUENCY ( GHz ) TYPICAL OUTPUT RETURN LOSS 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 2.00 4.00 6.00 8.00 10.00 FREQUENCY ( GHz ) MA4SW610B-1 12.00 14.00 16.00 18. 12.00 14.00 16.00 18. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 4 ...

Page 5

... North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 MA4SW610B and a tool tip o C. When hot gas is applied, the tool tip o C. The chip should not be exposed o C for more than 10 seconds ...

Page 6

... SP6T PIN Diode Switch with Integrated Bias Network Operation of the MA4SW610B-1 Switch The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Ports as shown in the schematic provides successful RF operation of the MA4SW Series of PIN Diode Switches. The Backside Area of the Die is the RF and DC Return Ground Plane ...

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