si5515cdc Vishay, si5515cdc Datasheet
si5515cdc
Available stocks
Related parts for si5515cdc
si5515cdc Summary of contents
Page 1
... Bottom View Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si5515CDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... 4 2 N-Channel 4.8 A, dI/dt = 100 A/µ P-Channel 2.4 A, dI/ 100 A/µ Si5515CDC Vishay Siliconix a Min. Typ. Max. N-Ch 3 Ω Ω N-Ch 7 ...
Page 4
... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.075 0.060 V GS 0.045 0.030 0.015 0.000 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...
Page 5
... Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si5515CDC Vishay Siliconix 0. 0. 125 °C J 0.04 0. °C J 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
Page 6
... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
Page 7
... S-81545-Rev. A, 07-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
Page 8
... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 ...
Page 9
... Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Si5515CDC Vishay Siliconix 0. 3 0.15 0. °C J 0.06 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 40 30 ...
Page 10
... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
Page 11
... Document Number: 68747 S-81545-Rev. A, 07-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...
Page 12
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...