si4559ady Vishay, si4559ady Datasheet
si4559ady
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si4559ady Summary of contents
Page 1
... Top View Ordering Information: Si4559ADY-T1—E3 (Lead (Pb)-free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C) Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain Current Diode Current ...
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... Si4559ADY Vishay Siliconix _ Parameter Static Drain Source Breakdown Voltage Drain-Source Breakdown Voltage V V Temperature Coefficient Temperature Coefficient Temperature Coefficient Temperature Coefficient GS(th) GS( h) Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...
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... – N-Channel N-Channel 1.7 A, di/dt = 100 A/ms Channel P-Channel –2 A, di/dt = –100 A/ms Si4559ADY Vishay Siliconix a Min Typ N-Ch 30 P- N- N-Ch 10 ...
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... Si4559ADY Vishay Siliconix Output Characteristics thru 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.080 0.075 0.070 0.065 0.060 0.055 0.050 0.045 0.040 – Drain Current (A) ...
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... Safe Operating Area 100 *r Limited DS(on 0 Single Pulse 0.01 0.001 0 – Drain-to-Source Voltage ( minimum which DS(on) Si4559ADY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0.12 0.11 0.10 0.09 0. 0.06 0.05 0. – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient ...
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... Si4559ADY Vishay Siliconix Current De-Rating 100 T – Case Temperature (_C) C Single Pulse Avalanche Capability 100 0.000001 0.00001 0.0001 T – Time In Avalanche (sec 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for ...
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... Document Number: 73624 S–52667—Rev. A, 02-Jan-06 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4559ADY Vishay Siliconix Notes Duty Cycle _C/W 2. Per Unit Base = R thJA (t) 3 ...
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... Si4559ADY Vishay Siliconix Output Characteristics thru – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.40 0.35 0.30 0. 0.15 0.10 0.05 0. – Drain Current (A) D Gate Charge 3 – Total Gate Charge (nC) g www ...
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... T A Single Pulse BV Limited DSS 0.01 0 – Drain-to-Source Voltage ( minimum which r is specified GS GS DS(on) Si4559ADY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage – Gate-to-Source Voltage (V) GS Single Pulse Power –2 – 100 Time (sec) P( ...
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... Si4559ADY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Power De-Rating, Junction-to-Foot 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 – Case Temperature (_C 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for *The power dissipation P is based J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... Document Number: 73624 S–52667—Rev. A, 02-Jan-06 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4559ADY Vishay Siliconix Notes Duty Cycle _C/W 2. Per Unit Base = R ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...