si4916dy Vishay, si4916dy Datasheet - Page 3

• Manufacturer Part Number: si4916dy
• Description: Dual N-channel 30-v Mosfet With Schottky Diode
• Manufacturer: Vishay

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74331
S-62450-Rev. A, 27-Nov-06
MOSFET SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
a
Symbol
I
V
C
rm
Symbol
F
T
t
t
J
d(on)
d(off)
Q
t
t
t
t
t
= 25 °C, unless otherwise noted
rr
a
b
r
f
rr
J
= 25 °C, unless otherwise noted
I
I
D
D
I
I
I
I
I
F
I
F
I
F
I
F
≅ 1 A, V
≅ 1 A, V
F
F
F
F
V
I
V
= 2.2 A, di/dt = 100 µA/µs
= 2.2 A, di/dt = 100 µA/µs
= 2.2 A, di/dt = 100 µA/µs
= 2.2 A, di/dt = 100 µA/µs
F
V
V
r
= 1.3 A, di/dt = 100 A/µs
= 1.3 A, di/dt = 100 A/µs
= 1.3 A, di/dt = 100 A/µs
= 1.3 A, di/dt = 100 A/µs
r
DD
DD
= 1.0 A, T
= - 30 V, T
Test Conditions
= 30 V, T
= 15 V, R
= 15 V, R
I
V
V
Channel-1
GEN
Channel-2
GEN
F
Test Conditions
r
r
= 1.0 A
= 30 V
= 10 V
= 10 V, R
= 10 V, R
J
J
J
= 100 °C
= 125 °C
= 125 °C
L
L
= 15 Ω
= 15 Ω
g
g
= 6 Ω
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min
Min
0.004
0.47
0.36
Typ
0.7
3.0
50
Vishay Siliconix
Typ
11
13
21
27
28
24
17
12
12
11
16
13
8
9
6
9
a
Si4916DY
0.100
Max
0.50
0.42
10
20
Max
www.vishay.com
15
15
18
20
32
40
10
15
40
35
Unit
mA
Unit
pF
V
nC
ns
ns
3