si4420bdy Vishay, si4420bdy Datasheet

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si4420bdy

Manufacturer Part Number
si4420bdy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4420bdy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4420bdy-T1-E3
Quantity:
15 000
Part Number:
si4420bdy-T1-GE3
Manufacturer:
Intersil
Quantity:
585
Part Number:
si4420bdy-TI-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 Board, t ≤ 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 73067
S-61013-Rev. B, 12-Jun-06
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free)
DS
30
(V)
G
S
S
S
0.0110 at V
0.0085 at V
1
2
3
4
r
DS(on)
Top View
SO-8
J
a
GS
GS
= 150 °C)
a
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
I
D
13.5
11
A
New Product
(A)
Steady State
Steady State
= 25 °C, unless otherwise noted
L = 0.1 mH
T
T
T
T
t < 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
G
Symbol
Symbol
T
R
R
J
V
V
E
N-Channel MOSFET
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
D
S
g
Tested
®
Power MOSFET
Typical
10 sec
13.5
10.8
2.3
2.5
1.6
40
70
23
- 55 to 150
± 20
30
50
20
20
Steady State
Maximum
1.26
9.5
7.5
1.4
0.9
50
90
28
Vishay Siliconix
Si4420BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
Pb-free
1

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si4420bdy Summary of contents

Page 1

... Top View Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a ...

Page 2

... Si4420BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73067 S-61013-Rev. B, 12-Jun-06 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4420BDY Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by r DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73067 Document Number: 73067 S-61013-Rev. B, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4420BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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