2sk4075 Renesas Electronics Corporation., 2sk4075 Datasheet

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2sk4075

Manufacturer Part Number
2sk4075
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
ORDERING INFORMATION
• Low on-state resistance
• Low C
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
DESCRIPTION
FEATURES
R
R
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DS(on)1
DS(on)2
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
PART NUMBER
2. Starting T
iss
= 6.7 mΩ MAX. (V
= 10 mΩ MAX. (V
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 2900 pF TYP.
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
A
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= 4.5 V, I
= 10 V, I
LEAD PLATING
DD
Pure Sn (Tin)
N-CHANNEL POWER MOS FET
= 20 V, R
D
D
The mark <R> shows major revised points.
= 30 A)
= 15 A)
A
G
= 25°C)
I
= 25 Ω, V
D(pulse)
I
V
V
R
R
D(DC)
E
P
P
T
DATA SHEET
T
I
DSS
GSS
AS
stg
AS
th(ch-C)
th(ch-A)
T1
T2
ch
SWITCHING
GS
2500 p/reel
PACKING
–55 to +150
= 20 → 0 V, L = 100
Tape
MOS FIELD EFFECT TRANSISTOR
±180
±20
±60
150
125
1.0
40
52
28
78
2.4
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
TO-252 (MP-3ZK)
μ
PACKAGE
typ. 0.27 g
H
2SK4075
(TO-252)
2006

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2sk4075 Summary of contents

Page 1

... DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn (Tin) 2SK4075-ZK-E2-AY FEATURES • Low on-state resistance R = 6.7 mΩ MAX DS(on mΩ MAX 4 DS(on)2 GS • Low 2900 pF TYP. ...

Page 2

... Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ DS τ μ ≤ Duty Cycle Data Sheet D18223EJ2V0DS 2SK4075 MIN. TYP. MAX. UNIT μ ±100 nA 1.5 2.0 2.5 V 9.3 S 5.2 6.7 mΩ 7.2 10 mΩ 2900 pF 450 pF 293 pF 18 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 100 Pulse Width - s Data Sheet D18223EJ2V0DS 2SK4075 50 75 100 125 150 175 T - Case Temperature - ° 125°C/W th(ch-A) = 2.4°C/W th(ch-C) Single Pulse 100 1000 3 ...

Page 4

... DRAIN CURRENT 100 0.1 150 200 DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 Data Sheet D18223EJ2V0DS 2SK4075 25°C 75° Pulsed Gate to Source Voltage - V = 150°C A 75°C 25°C −55° Pulsed 1 ...

Page 5

... Q G REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 10 di/dt = 100 A/ μ 0.1 1 Data Sheet D18223EJ2V0DS 2SK4075 C iss C oss C rss 1 10 100 Pulsed 0 ...

Page 6

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 0.5±0.1 No Plating 0 to 0.25 0.5±0.1 1.0 Data Sheet D18223EJ2V0DS 2SK4075 ...

Page 7

... Draw-out side MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS The 2SK4075 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK4075 M8E 02. 11-1 ...

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