2sk4071 Renesas Electronics Corporation., 2sk4071 Datasheet

2sk4071

Manufacturer Part Number

2sk4071

Description

Switching N-channel Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SK4071.pdf (6 pages)

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Document No. D18388EJ1V0DS00 (1st edition)

Date Published September 2006 NS CP(K)

Printed in Japan

DESCRIPTION

converter usage to 24 V in the direct current input voltage.

resistance, and is the best for the high-speed switching usage.

FEATURES

• Low input capacitance C

• Low on-state resistance

• 2.5 V drive available

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external

ABSOLUTE MAXIMUM RATINGS (T

Note PW ≤ 10

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

The 2SK4071 is the best switching element for the DC-DC

It excels in the switching characteristics in low on-state

DS(on)1

electrode.)

2SK4071-AZ

2SK4071-T-AZ

PART NUMBER

= 1.5 Ω MAX. (V

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note

= 25°C)

= 0 V)

iss

= 0 V)

= 4.5 V, I

= 150 pF TYP.

TO-92 (SC-43A)

= 0.5 A)

PACKAGE

N-CHANNEL MOSFET

= 25°C)

DATA SHEET

D(pulse)

D(DC)

DSS

GSS

stg

SWITCHING

MOS FIELD EFFECT TRANSISTOR

−55 to +150

±1.0

±4.0

0.75

150

±12

150

PACKAGE DRAWING (Unit: mm)

°C

0.5

1.27

5.2 MAX.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

2.54

2SK4071

Source

Drain

1. Source

2. Drain

3. Gate

Body

Diode

2006

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2sk4071 Summary of contents

Page 1

... DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES • Low input capacitance C = 150 pF TYP. iss • ...

Page 2

... 100 90 10 90% 90 10% 10 d(on) d(off off Data Sheet D18388EJ1V0DS 2SK4071 MIN. TYP. MAX. UNIT μ μ ±10 A 0.5 1.0 1.5 V 0.8 2.3 S 1.2 1.5 Ω Ω 1.3 1.75 150 ...

Page 3

... TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 150 175 100 ms 1000 R = 166.7 　° C/W th(ch- 100 Pulse Width - s Data Sheet D18388EJ1V0DS 2SK4071 50 75 100 125 150 175 - Ambient Temperature - °C A Single pulse 100 1000 3 ...

Page 4

... 0.1 125 175 0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 2.5 2 1 Data Sheet D18388EJ1V0DS 2SK4071 = 150°C A 125°C 75°C 25°C −25°C −55° Gate to Source Voltage - −55°C −25°C 25°C 75°C 125°C 150° ...

Page 5

... V 120 Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 1 0.1 1 Diode Forward Current - A F Data Sheet D18388EJ1V0DS 2SK4071 C iss C oss C rss 10 100 1000 1 120 ...

Page 6

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK4071 M8E 02. 11-1 ...

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