2sk40701-s27-ay Renesas Electronics Corporation., 2sk40701-s27-ay Datasheet

2sk40701-s27-ay

Manufacturer Part Number

2sk40701-s27-ay

Description

Mos Field Effect Transistor

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SK40701-S27-AY.pdf (8 pages)

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Document No. D18573EJ2V0DS00 (2nd edition)

Date Published June 2007 NS

Printed in Japan

<R>

• Low on-state resistance

• Low gate charge

• Gate voltage rating : ±30 V

• Avalanche capability ratings

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

DESCRIPTION

and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

ORDERING INFORMATION

2SK4070-S15-AY

2SK4070(1)-S27-AY

2SK4070-ZK-E1-AY

2SK4070-ZK-E2-AY

The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DS(on)

= 5 nC TYP. (V

PART NUMBER

2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm

3. Starting T

= 11 Ω MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

= 450 V, V

= 25°C)

Note3

= 10 V, I

= 25°C)

= 0 V)

LEAD PLATING

Pure Sn (Tin)

N-CHANNEL POWER MOS FET

= 150 V, R

Note2

= 10 V, I

= 0.5 A)

The mark <R> shows major revised points.

= 25°C)

D(DC)

D(pulse)

DSS

GSS

stg

= 1.0 A)

= 25 Ω, V

DATA SHEET

SWITCHING

Tube 70 p/tube

Tube 75 p/tube

Tape 2500 p/reel

PACKING

−55 to +150

MOS FIELD EFFECT TRANSISTOR

= 20 → 0 V

±1.0

±4.0

38.4

600

±30

150

1.0

0.8

TO-252 (MP-3ZK) typ. 0.27 g

TO-251 (MP-3-a) typ. 0.39 g

TO-251 (MP-3-b) typ. 0.34 g

°C

PACKAGE

2SK4070

(TO-251)

(TO-252)

2006

Related parts for 2sk40701-s27-ay

2sk40701-s27-ay Summary of contents

Page 1

DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance = 11 Ω MAX. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R Input Capacitance C Output Capacitance C Reverse Transfer ...

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2sk40701-s27-ay Renesas Electronics Corporation., 2sk40701-s27-ay Datasheet

2sk40701-s27-ay

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