2sk1221 Fuji Electric holdings CO.,Ltd, 2sk1221 Datasheet
2sk1221
Manufacturer Part Number
2sk1221
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK1221.pdf
(3 pages)
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2SK1221
N-CHANNEL SILICON POWER MOSFET
Item
DC-DC converters
Thermal characteristics
Low on-resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
High current
No secondary breakdown
High voltage
Maximum ratings and characteristics
Low driving power
V
Switching regulators
UPS
General purpose power amplifier
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Diode forward on-voltage
Reverse recovery time
Thermal resistance
Applications
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Electrical characteristics (T
Item
Features
(t
(t
GSS
on
off
=t
=t
=
d(on)
d(off)
±
30V Guarantee
+t
+t
r
f
)
)
on
off
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
V
P
T
T
D
D(puls]
DR
D
ch
stg
GS
DS
R
R
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
V
t
Symbol
GSS
d(on)
d(off)
f
DSS
r
rr
th(ch-a)
th(ch-c)
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
Rating
+150
-55 to +150
250
±30
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
V
I
I
D
10
28
10
80
D
D
D
D
F
F
DS
GS
DS
GS
CC
GS
=10A
=2xI
=I
channel to ambient
=1mA
=1mA
=5.0A V
=5.0A V
channel to case
DR
=250V
=150V R
= ±30V V
=25V
=0V
=10V
DR
di/dt=100A/ s T
V
GS
GS
DS
V
Test Conditions
V
V
=0V T
DS
G
GS
=10V
=25V
DS
GS
=25
=V
=0V
=0V
=0V
GS
ch
Unit
°C
°C
V
A
A
A
V
W
=25°C
ch
=25°C
T
T
ch
ch
=25°C
=125°C
F- II SERIES
TO-220AB
FUJI POWER MOSFET
JEDEC
EIAJ
Outline Drawings
Equivalent circuit schematic
Min.
Min.
Gate(G)
250
2.5
2.0
570
140
100
140
Typ.
Typ.
10
10
70
20
40
50
TO-220AB
3.5
0.2
0.3
4.5
1.12
SC-46
Source(S)
Drain(D)
500
100
860
210
150
110
Max.
75.0
Max.
30
60
75
1.56
3. Source
5.0
1.0
0.4
1.68
Units
Units
°C/W
°C/W
V
V
µA
mA
nA
S
pF
ns
V
ns
1
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2sk1221 Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High current Low on-resistance No secondary breakdown Low driving power High voltage ± 30V Guarantee GSS Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) ...
Page 2
... Typical forward transconductance vs gfs [ state resistance vs. T 0.8 0.6 R DS(on 0.4 0 -50 Typical Drain-Source on state resistance vs. I 1.5 1.0 R DS(on 0 Gate threshold voltage vs 6.0 5.0 4.0 V GS(th 3.0 2.0 1 2SK1221 100 150 T [ ° 100 150 T [ ° ...
Page 3
... 1.0 1.5 0 100 0 2SK1221 Typical input charge Allowable power dissipation vs 100 150 T [ ° Safe operating area 10 50 100 500 1000 ...