2sk1006-01mr Fuji Electric holdings CO.,Ltd, 2sk1006-01mr Datasheet
2sk1006-01mr
Manufacturer Part Number
2sk1006-01mr
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK1006-01MR.pdf
(3 pages)
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2SK1006-01MR
N-CHANNEL SILICON POWER MOSFET
Item
DC-DC converters
Thermal characteristics
Low on-resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
High current
No secondary breakdown
High voltage
Maximum ratings and characteristics
Low driving power
V
Switching regulators
UPS
General purpose power amplifier
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Diode forward on-voltage
Reverse recovery time
Thermal resistance
Applications
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Electrical characteristics (T
Item
Features
(t
(t
GSS
on
off
=t
=t
= ± 30V Guarantee
d(on)
d(off)
+t
+t
r
f
)
)
on
off
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
V
P
T
T
D
D(puls]
DR
D
ch
stg
GS
DS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
V
t
th(ch-a)
th(ch-c)
GSS
r
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
SD
rss
I
(on)
(off)
DSS
Rating
+150
-55 to +150
450
±30
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
V
I
I
D
14
40
D
D
D
D
F
F
DS
GS
DS
GS
CC
GS
=4.5A
=2xI
=I
channel to ambient
=1mA
=1mA
=2.5A V
=2.5A V
5
5
channel to case
DR
=450V V
=300V R
= ±30V V
=25V
=0V
=10V
DR
di/dt=100A/ s T
V
GS
GS
DS
V
Test Conditions
V
GS
=0V T
DS
G
GS
=10V
=25V
DS
=25
=0V
=V
=0V
=0V
GS
ch
Unit
°C
°C
V
A
A
A
V
W
=25°C
ch
=25°C
T
T
ch
ch
=25°C
=125°C
F- II SERIES
TO-220F15
FUJI POWER MOSFET
JEDEC
EIAJ
2.54
Outline Drawings
Equivalent circuit schematic
Min.
Min.
Gate(G)
450
2.5
1.5
Typ.
500
300
Typ.
10
10
70
30
10
50
80
50
3.5
0.2
1.1
3.0
1.0
SC-67
Source(S)
Drain(D)
Max. Units
3. Source
500
100
750
100
120
Max.
62.5
45
15
80
80
3.125
5.0
1.0
1.6
1.5
Units
°C/W
°C/W
V
V
µA
mA
nA
S
pF
ns
V
ns
1
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2sk1006-01mr Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High current Low on-resistance No secondary breakdown Low driving power High voltage V = ± 30V Guarantee GSS Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) ...
Page 2
... Drain-Source on state resistance vs DS(on -50 0 Typical Drain-Source on state resistance vs DS(on Gate threshold voltage vs 5.0 4.0 3.0 V GS(th 2.0 1 2SK1006-01MR ch 50 100 150 T [ ° 100 150 T [ ° ...
Page 3
... R th [°C/ sec 0.5 0 0.5 0.3 0.1 100 150 2SK1006-01MR Forward characteristics of reverse diode 0.5 1 Safe operating area 100 300 500 1000 1.5 3 ...