2sk1952 Hitachi Metals, Ltd, 2sk1952 Datasheet
2sk1952
Manufacturer Part Number
2sk1952
Description
Silicon N Channel Mos Fet
Manufacturer
Hitachi Metals, Ltd
Datasheet
1.2SK1952.pdf
(3 pages)
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Part Number:
2SK1952
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Part Number:
2SK1952
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2SK1952
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
• Suitable for Switching regulator, DC – DC
• Avalanche ratings
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body–drain diode reverse drain current
———————————————————————————————————————————
Avalanche current
———————————————————————————————————————————
Avalanche energy
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
***
5 V source
converter
PW 10 µs, duty cycle 1 %
Value at Tc = 25 °C
Value at Tch = 25 °C, Rg 50
Symbol
V
V
I
I
I
I
E
Pch**
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
***
***
*
1
TO–220FM
Ratings
60
±20
40
160
40
40
137
35
150
–55 to +150
2
3
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1
2 3
1. Gate
2. Drain
3. Source
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2sk1952 Summary of contents
Page 1
... Silicon N Channel MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche ratings Table 1 Absolute Maximum Ratings (Ta = 25° ...
Page 2
... Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ——————————————————————————————————————————— ...
Page 3
...