2sk1315l Renesas Electronics Corporation., 2sk1315l Datasheet
2sk1315l
Available stocks
Related parts for 2sk1315l
2sk1315l Summary of contents
Page 1
...
Page 2
Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
Page 3
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK ...
Page 4
Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
Page 5
Electrical Characteristics ( Item Drain to source 2SK1315 V breakdown voltage 2SK1316 Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1315 I drain current 2SK1316 Gate to source cutoff voltage Static Drain ...
Page 6
Power vs. Temperature Derating 100 Case Temperature T (°C) C 150 ...
Page 7
Package Dimensions 10.2 1.2 0.2 2.54 0.5 2SK1315(L)(S), 2SK1316(L)(S) 4.44 0.3 1.3 2.59 1.27 0.2 + 0.2 0.86 – 0.1 0.76 0.1 2.54 0.5 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 0.2 ...
Page 8
Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 ...
Page 9
Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: ...
Page 10
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that ...