2sk1314 Renesas Electronics Corporation., 2sk1314 Datasheet
2sk1314
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2sk1314 Summary of contents
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... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK Gate 2. Drain 3. Source S 4. Drain ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1313 2SK1314 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value ...
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... Turn-off delay time t d(off) Fall time t f Body to drain diode forward V DF voltage Body to drain diode reverse t rr recovery time Note: 1. Pulse test See characteristic curves of 2SK1155, 2SK1156. 2SK1313(L)(S), 2SK1314(L)(S) Typ Max Unit 450 — — V 500 30 — — V — — — ...
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... Power vs. Temperature Derating 0 50 100 Case Temperature T (°C) C 150 ...
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Hitachi Code LDPAK (L) JEDEC — EIAJ — Weight (reference value) 1.4 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...