2sk2323 Panasonic Corporation of North America, 2sk2323 Datasheet
2sk2323
Manufacturer Part Number
2sk2323
Description
Silicon N-channel Power F-mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK2323.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2323
Manufacturer:
PANASONIC
Quantity:
12 500
Power F-MOS FETs
2SK2323
Silicon N-Channel Power F-MOS
* L= 5mH, I
Avalanche energy capability guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Non-contact relay
Solenoid drive
Motor drive
Control equipment
Switching mode regulator
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Features
Applications
Absolute Maximum Ratings (Tc = 25˚C)
Electrical Characteristics (Tc = 25˚C)
L
=1A, 1 pulse
Parameter
Parameter
DC
Pulse
T
Ta= 25˚C
C
= 25˚C
(Tentative)
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
Symbol
Symbol
DSS
GSS
d(on)
r
f
d(off)
V
V
I
I
EAS
P
T
T
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
D
DP
DSS
th
DSF
D
ch
stg
DSS
GSS
fs
|
*
–55 to +150
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
=1mA, V
Rating
=1A, V
±30
600
150
2.5
= 480V, V
= ±30V, V
= 25V, I
=10V, I
= 25V, I
= 20V, V
=10V, R
= 200V, I
±1
±2
40
2
GS
GS
D
D
D
L
Condition
= 0.5A
GS
= 0
=1mA
= 0.5A
=400
= 0
D
GS
DS
= 0.5A
= 0, f=1MHz
= 0
= 0
Unit
mJ
˚C
˚C
W
V
V
A
A
ø3.2 0.1
Min
0.32
600
2
7˚
1
9.9 0.3
2 3
0.54
Typ
280
5.8
30
10
10
10
50
50
5.08 0.4
1.45 0.15
2.54 0.2
0.75 0.1
1.2 0.15
3.125
Max
–1.5
62.5
100
8.5
±1
TO-220E Package
5
4.6 0.2
2SK758
0.7 0.1
1 : Gate
2 : Drain
3 : Source
Unit : mm
2.9 0.2
2.6 0.1
˚C/W
˚C/W
Unit
µ A
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
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2sk2323 Summary of contents
Page 1
... Power F-MOS FETs 2SK2323 (Tentative) Silicon N-Channel Power F-MOS Features Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Non-contact relay Solenoid drive Motor drive Control equipment Switching mode regulator Absolute Maximum Ratings (Tc = 25˚C) Parameter Symbol Drain-Source breakdown voltage ...
Page 2
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...