2sk2327 Panasonic Corporation of North America, 2sk2327 Datasheet
2sk2327
Manufacturer Part Number
2sk2327
Description
Silicon N-channel Power F-mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK2327.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2327
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Power F-MOS FETs
2SK2327
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 2mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 10A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 10A, V
= 480V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, R
= 200V, I
600
±30
±10
±20
100
100
150
3
Conditions
GS
D
D
D
GS
GS
L
D
= 1mA
= 5A
= 5A
GS
DS
= 0
= 40
= 0
= 5A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
5.45±0.3
1.1±0.1
min
600
2.0±0.2
3.6
2
4.0
5˚
1
15.5±0.5
2
2000
210
195
typ
0.6
3
70
30
40
60
6
5.45±0.3
3.2±0.1
41.67
max
0.75
1.25
100
±1
5˚
1.7
5
TOP-3E Package
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
3.0±0.3
5˚
unit: mm
5˚
5˚
°C/W
°C/W
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1
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2sk2327 Summary of contents
Page 1
... Power F-MOS FETs 2SK2327 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...
Page 2
... Ambient temperature Ta ( ˚ DS(on) D 1.2 V =10V GS T =100˚C C 1.0 0.8 25˚C 0.6 0˚C 0.4 0 Drain current I D 2SK2327 IAS L-load 100 T =25˚ 100mJ 3 1 0.3 0.1 0.1 0 L-load ( =25V DS T =25˚C C ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...