2sk2509 Panasonic Corporation of North America, 2sk2509 Datasheet
2sk2509
Manufacturer Part Number
2sk2509
Description
Silicon N-channel Power F-mos
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK2509.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2509
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Power F-MOS FETs
2 S K 2 5 0 9
Silicon N-Channel Power F-MOS
* L= 5mH, I
Avalanche energy capability guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Non-contact relay
Solenoid drive
Motor drive
Control equipment
Switching mode regulator
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Features
Applications
Absolute Maximum Ratings (Tc = 25˚C)
Electrical Characteristics (Tc = 25˚C)
L
= 2.5A, 1 pulse
Parameter
Parameter
DC
Pulse
T
Ta= 25˚C
C
= 25˚C
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
Symbol
Symbol
DSS
GSS
d(on)
r
f
d(off)
V
V
I
I
EAS
P
T
T
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
D
DP
DSS
th
DSF
D
ch
stg
DSS
GSS
fs
|
*
–55 to +150
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
=1mA, V
Rating
±2.5
15.6
= 2.5A, V
±30
500
150
1.3
= 400V, V
=±30V, V
= 25V, I
=10V, I
= 25V, I
= 20V, V
=10V, R
=150V, I
±5
40
GS
D
D
D
L
=1.5A
Condition
GS
D
GS
=1mA
=1.5A
=100
DS
= 0
GS
=1.5A
= 0, f= 1MHz
= 0
= 0
= 0
Unit
mJ
W
˚C
˚C
V
V
A
A
Min
500
2
1
1
5.08 0.5
8.5 0.2
6.0 0.5
2
3
2.54 0.3
Typ
330
3.2
1.5
0.8 0.1
55
20
15
25
30
55
1.5max.
3.125
96.15
Max
–1.5
100
±1
5
4
2SK2509
N Type Package
3.4 0.3
1 : Gate
2 : Drain
3 : Source
Unit : mm
0.5max.
˚C/W
˚C/W
1.0 0.1
1.1max.
Unit
µ A
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
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2sk2509 Summary of contents
Page 1
... D V =10V, I =1. 25V, I =1. 2.5A 20V 1MHz =150V, I =1. =10V, R =100 GS L 2SK2509 Unit : mm 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 1.5max. 1.1max. 0.8 0.1 0.5max. 2.54 0.3 5.08 0 Gate 2 : Drain 3 : Source N Type Package Min Typ Max Unit 100 µ A ±1 µ A 500 ...
Page 2
... DS 2000 V =20V DS f=1MHz 1000 500 C iss 300 200 100 oss rss 120 160 200 ( V ) Drain-Source voltage V DS 2SK2509 I – 3.0 V =10V =25˚C C 6.5V 2.5 2.0 6V 1.5 1.0 40W 5.5V 0 Drain voltage – ...
Page 3
... Power F-MOS FETs R th 1000 Notes: R was measured at Ta=25˚C th and under natural convection. (1) without heat sink (2) with 2mm Al heat sink 100 10 1 0.1 10 –4 10 –3 10 –2 10 –1 Pulse width t – (1) ( 2SK2509 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...