2sk2552 Renesas Electronics Corporation., 2sk2552 Datasheet

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2sk2552

Manufacturer Part Number
2sk2552
Description
N-channel Silicon Junction Field Effect Transistor For Impedance Converter Of Ecm
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. D15941EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
FEATURES
• Compact package
• High forward transfer admittance
• Includes diode and high resistance at G - S
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1. V
The 2SK2552 is suitable for converter of ECM.
1000
1600
PART NUMBER
2. Mounted on ceramic substrate of 3.0 cm
µ
µ
2SK2552
S TYP. (I
S TYP. (I
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
GS
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
= –1.0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DSS
DSS
= 100
= 200
Note2
Note1
µ
µ
A)
A)
FOR IMPEDANCE CONVERTER OF ECM
SC-75 (USM)
PACKAGE
A
The mark
= 25°C)
V
V
T
JUNCTION FIELD EFFECT TRANSISTOR
P
GDO
DSX
I
I
T
stg
D
G
T
j
DATA SHEET
2
x 0.64 mm
–55 to +125
shows major revised points.
–20
200
125
20
10
10
mW
mA
mA
°C
°C
V
V
PACKAGE DRAWING (Unit: mm)
2
Gate
EQUIVALENT CIRCUIT
0.2
0.5
1.6 ± 0.1
0.3
+0.1
–0
1.0
2SK2552
3
+0.1
–0
0.5
1
0.75 ± 0.05
1: Source
2: Drain
3: Gate
Drain
Source
0.6
0.15
0 to 0.1
+0.1
–0.05
2002

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2sk2552 Summary of contents

Page 1

... N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µ S TYP 100 µ A) DSS 1600 µ S TYP 200 µ A) DSS • Includes diode and high resistance ...

Page 2

... 1.0 kHz fs2 5 1.0 MHz iss See Test Circuit 180 150 to 300 200 to 450 NV (r.m.s) Data Sheet D15941EJ2V0DS 2SK2552 MIN. TYP. MAX. UNIT µ 40 600 A −0.1 −1.0 V µ 350 S µ 350 S 7.0 8.0 pF µ 1.8 3.0 V ...

Page 3

... V ˚C GS INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 +0 500 1000 µ Data Sheet D15941EJ2V0DS 2SK2552 −0.4 −0.2 0 0.2 0.4 0.6 0.8 1.0 −10 −20 −30 −40 - Gate to Source Voltage - 1.0 MHz ...

Page 4

... DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J7 900 720 540 360 180 Data Sheet D15941EJ2V0DS 2SK2552 0.15 V 0. −0.15 V −0.05 V −0. Drain to Source Voltage - V 0.15 V 0. −0.05 V −0.10 V −0. ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK2552 M8E 02. 11-1 ...

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