2sk2882 TOSHIBA Semiconductor CORPORATION, 2sk2882 Datasheet

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2sk2882

Manufacturer Part Number
2sk2882
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2882
Manufacturer:
ST
Quantity:
20 000
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
= 50 V, T
Characteristics
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 0.8 mH, R
= 0.8~2.0 V (V
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
DS
| = 17 S (typ.)
AS
AR
stg
D
ch
D
2SK2882
= 10 V, I
= 0.08 Ω (typ.)
R
R
Symbol
th (ch-c)
th (ch-a)
DS
= 150 V)
−55~150
D
Rating
150
150
±20
176
150
4.5
18
54
45
18
G
= 1 mA)
1
= 25 Ω, I
Max
2.78
62.5
AR
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
= 18 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2
-π-MOSV)
2-10R1B
SC-67
2006-11-20
2SK2882
Unit: mm

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2sk2882 Summary of contents

Page 1

... 176 4 150 °C ch −55~150 T °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω 2SK2882 2 -π-MOSV) Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) 2006-11-20 ...

Page 2

... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK2882 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ 0.8 2.0 ⎯ 0.09 0.18 ⎯ 0.08 0.12 ⎯ ⎯ ⎯ 1380 ⎯ ...

Page 3

... Gate-source voltage V R 1000 Common source 500 Tc = 25°C 300 Pulse test 100 100 0.1 0.3 0.5 Drain current I 3 2SK2882 I – 4 – Common source Tc = 25°C Pulse test ...

Page 4

... C iss 3 C oss 2 C rss 1 0 −80 − 100 Dynamic Input/Output Characteristics 160 120 160 0 4 2SK2882 I – − −0.4 −0.8 −1.2 −1.6 Drain-source voltage V ( – Common source ...

Page 5

... Pulse width t (s) w 200 160 120 Channel temperature (initial) T 300 15 V −15 V Test circuit = 25 Ω 0 2SK2882 – 100 125 150 (° VDSS Wave form ⎛ ⎞ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2882 20070701-EN 2006-11-20 ...

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