2sk2964 TOSHIBA Semiconductor CORPORATION, 2sk2964 Datasheet
2sk2964
Manufacturer Part Number
2sk2964
Description
N Channel Mos Type High Speed, High Current Switching, Chopper Regulator, Dc-dc Converterand And Motor Drive Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK2964.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2964
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current : I
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
= 25 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
: V
ch
DSS
= 25°C (initial), L = 10 mH, R
th
(Note 1)
(Note 2)
(Note 3)
= 0.8~2.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
V
th (ch−a)
: R
: |Y
V
V
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
D
D
DS (ON)
2SK2964
fs
DS
| = 2.5 S (typ.)
= 10 V, I
DS
= 0.13 Ω (typ.)
−55~150
= 30 V)
Rating
0.05
Max
±20
150
250
0.5
1.5
G
30
30
56
2
6
2
1
D
= 25 Ω, I
= 1 mA)
AR
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
A
= 2 A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSVI)
2-5K1B
2008-01-17
―
―
2SK2964
Unit: mm
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2sk2964 Summary of contents
Page 1
... 150 ° −55~150 °C stg Symbol Max Unit R 250 ° (ch− Ω 2SK2964 2 −π−MOSVI) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-5K1B Weight: 0.05 g (typ.) 2008-01-17 ...
Page 2
... Q gd (Ta = 25°C) Symbol Test Condition I — — DRP DSF 2SK2964 Min Typ. Max — — ±10 — — 100 30 — 0.8 — 2.0 — 0.18 0.25 — 0.13 0.18 1.2 2.5 — 140 — 30 — 80 — ...
Page 3
... 3 2SK2964 2008-01-17 ...
Page 4
... 4 2SK2964 2008-01-17 ...
Page 5
... Ω 2SK2964 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD 2008-01-17 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2964 20070701-EN 2008-01-17 ...