2sk3065 ROHM Co. Ltd., 2sk3065 Datasheet
2sk3065
Manufacturer Part Number
2sk3065
Description
Transistors Small Switching
Manufacturer
ROHM Co. Ltd.
Datasheet
1.2SK3065.pdf
(4 pages)
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Transistors
Small switching (60V, 2A)
2SK3065
Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
Structure
Silicon N-channel
MOS FET transistor
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
∗
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25°C)
Channel temperature
Storage temperature
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse drain
current
Static drain-source on-state
resistance
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
undervoltage actuation (2.5V actuation).
Pw ≤ 300µs, Duty cycle ≤ 1%
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
R
R
V
Y
(BR)DSS
t
t
C
I
I
DS(on)
DS(on)
C
C
GS(th)
d(on)
d(off)
GSS
DSS
fs
t
t
oss
rss
iss
r
Symbol
f
∗
V
V
Tstg
Tch
I
I
P
I
DRP
DSS
GSS
I
DR
DP
D
D
∗ 1
∗ 1
Min.
0.8
1.5
60
−
−
−
−
−
−
−
−
−
−
−
−55∼+150
Typ.
0.25
0.35
160
120
Limits
85
25
20
50
70
±20
−
−
−
−
−
150
0.5
60
2
8
2
8
2
∗ 2
±10
Max.
0.32
0.45
1.5
10
−
−
−
−
−
−
−
−
−
Unit
Unit
°C
°C
µA
µA
pF
pF
pF
ns
ns
ns
ns
W
Ω
Ω
V
V
A
A
A
A
V
V
S
I
I
I
V
I
V
V
V
V
I
V
R
R
D
D
D
f = 1MHz
D
D
DS
GS
GS
GS
DS
DS
L
G
= 1mA, V
= 1A, V
= 1A, V
= 1A, V
= 1A, V
= 30Ω
= 10Ω
= 60V, V
= 10V, I
= 10V
= ±20V, V
= 0V
= 4V
Test Conditions
GS
GS
DS
DD
External dimensions (Units : mm)
GS
D
= 10V
ROHM : MPT3
E I A J : SC-62
= 4V
= 2.5V
GS
= 1mA
DS
= 0V
30V
= 0V
= 0V
∗ A protection diode has been built in between the
Internal equivalent circuit
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
Gate
1.5±0.1
0.4±0.1
Abbreviated symbol : KE
( 1 )
∗Gate
Protection
Diode
1.6±0.1
( 2 )
3.0±0.2
4.5
0.5±0.1
+0.2
−0.1
( 3 )
0.4±0.1
1.5±0.1
Drain
1.5±0.1
Source
0.4
+0.1
−0.05
2SK3065
(1) Gate
(2) Drain
(3) Source
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2sk3065 Summary of contents
Page 1
... 30V D DD − − = 30Ω − = 10Ω 2SK3065 +0.2 4.5 −0.1 1.6±0.1 1.5±0 +0.1 0.4 −0.05 0.4±0.1 0.5±0.1 0.4±0.1 1.5±0.1 1.5±0.1 3.0±0.2 (1) Gate (2) Drain Abbreviated symbol : KE (3) Source Drain ∗Gate Protection Source Diode ...
Page 2
... V =10V 10mA 1 I =1mA D 0 −50 − 100 125 150 CHANNEL TEMPERATURE : Tch( °C) Fig.5 Gate Threshold Voltage vs. Channel Temperature 2SK3065 2 Ta=25°C 4V Pulsed 3. =1. DRAIN-SOURCE VOLTAGE : Fig.3 Typical Output Characteristics 10 V =4V GS Pulsed Ta=125° ...
Page 3
... GS R =10Ω G Ta=25 °C Pulsed t d(off) 100 d(on DRAIN CURRENT : Fig.14 Switching Characteristics (a measurement circuit diagram Fig. refers 18 times) 2SK3065 1 V =4V GS Pulsed 0 = −50 − 100 125 150 CHANNEL TEMPERATURE : Tch( °C) Fig.9 Static Drain-Source On- State Resistance vs ...
Page 4
... Fig.17 Switching Time Test Circuit When mounted 0.7 mm aluminum-ceramic board. Ta=25°C θ θ (t) (t) th (ch- • th (ch-c) θ =62.5°C/W th (ch- 100 Pulse width 90% 50 10 d(on d(off Fig.18 Switching Time Waveforms 2SK3065 50% 10% 90 off ...