2sk3134l Renesas Electronics Corporation., 2sk3134l Datasheet
2sk3134l
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2sk3134l Summary of contents
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Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance typ. DS(on) Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A ...
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Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty ...
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Main Characteristics Power vs. Temperature Derating 160 120 100 Case Temperature T Typical Output Characteristics 100 Drain to ...
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Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test – Case Temperature T Body to Drain ...
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Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width ...
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Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.4.00 Sep 07, 2005 page Vout Monitor R L Vin V DD Vout = d(on) Switching Time Waveforms 90% 10% ...
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Package Dimensions JEITA Package Code RENESAS Code PRSS0004AE-A JEITA Package Code RENESAS Code SC-83 PRSS0004AE-B 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Rev.4.00 Sep 07, 2005 page Package Name MASS[Typ.] LDPAK(L) / ...
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... Ordering Information Part Name 2SK3134L-E 500 pcs 2SK3134STL-E 1000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page Quantity Box (Sack) ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...