2sk3135 Renesas Electronics Corporation., 2sk3135 Datasheet

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2sk3135

Manufacturer Part Number
2sk3135
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sk3135L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2sk3135S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current
4 V gate drive device can be driven from 5 V source
DS(on)
= 6 m
typ.
2SK3135(L),2SK3135(S)
LDPAK
Silicon N Channel MOS FET
High Speed Power Switching
1
2
3
1
2
3
4
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
4
ADE-208-695B (Z)
February 1999
3rd. Edition

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2sk3135 Summary of contents

Page 1

... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance typ. DS(on) Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK Gate 2. Drain 3. Source 4. Drain 3 ADE-208-695B (Z) 3rd. Edition ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Gate to drain charge Qgd Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse t recovery time Note: 1. Pulse test 2SK3135(L),2SK3135(S) Typ Max Unit 60 — — V (BR)DSS — — 0.1 A GSS — — 10 ...

Page 4

... Main Characteristics Power vs. Temperature Derating 200 150 100 100 Case Temperature Typical Output Characteristics 100 Drain to Source Voltage 4 Maximum Safe Operation Area 1000 300 100 30 10 Operation in 3 this area is ...

Page 5

... 10, 20 – 100 150 Case Temperature 2SK3135(L),2SK3135(S) Static Drain to Source on State Resistance vs. Drain Current 100 (V) Drain Current Forward Transfer Admittance vs. ...

Page 6

... Body–Drain Diode Reverse Recovery Time 1000 500 200 100 µ ° 0.1 0 Reverse Drain Current I Dynamic Input Characteristics 100 160 ...

Page 7

... Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage V SD Avalanche Test Circuit V DS Monitor I Monitor Vin 2SK3135(L),2SK3135(S) Maximun Avalanche Energy vs. Channel Temperature Derating 250 200 150 100 (V) Channel Temperature Tch ( C) Avalanche Waveform • L • ...

Page 8

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin – c( (t) • ch – 1.25 °C/ ° 100 m Pulse Width PW (S) Vout Monitor R L 10% ...

Page 9

... Package Dimensions 4.44 ± 0.2 10.2 ± 0.3 1.2 ± 0.2 1.27 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 2SK3135(L),2SK3135(S) 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.27 ± 0.2 +0.2 1.2 ± 0.2 0.4 ± 0.1 0.86 –0.1 2.54 ± 0.5 2.54 ± 0.5 S type Unit: mm 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 0.4 ± 0.1 LDPAK Hitachi Code EIAJ — — JEDEC 9 ...

Page 10

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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