2sk3517-01 Fuji Electric holdings CO.,Ltd, 2sk3517-01 Datasheet

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2sk3517-01

Manufacturer Part Number
2sk3517-01
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3517-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3517-01
Super FAP-G Series
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
Symbol
ch
stg
AS
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
*1
*4
*2
*3
Absolute maximum ratings
*4 VDS 500V
Ratings
-55 to +150
Test Conditions
V
V
R
*2 Tch 150°C
V
V
V
I
I
channel to ambient
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=5.9mH T
I
I
-di/dt=100A/µs
channel to case
D
D
D
D
D
F
F
< =
CC
GS
+150
GS
DS
DS
GS
=3A
=3A
DS
GS
CC
GS
=6A V
=6A V
= 250 µ A
= 250 µ A
=6A
500
±24
±30
115
=300V I
=10V
=10
±6
20
90
=500V V
=400V V
=±30V
=25V
=0V
=250V
=10V
6
5
2.02
= <
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
ch
=0V T
=0V
V
=10V
=25V
D
=25°C
GS
GS
DS
=3A
V
V
GS
DS
=0V
=0V
=0V
T
=V
=0V
ch
ch
kV/µs
kV/µs
W
°C
°C
Unit
=25°C
mJ
=25°C
V
A
A
V
A
GS
T
T
ch
ch
=25°C
=125°C
FUJI POWER MOSFET
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
3.0
2.5
6
Typ.
Typ.
430
10
60
10
20
15
1.15
5
2.5
5
5
6.5
2.5
1.00
0.5
1.7
Source(S)
Drain(D)
Max.
250
100
675
62.0
Max.
25
90
15
30
22.5
10.5
1.39
5.0
1.50
4.5
7.5
7.5
4.5
1.50
Units
Units
°C/W
°C/W
200303
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

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2sk3517-01 Summary of contents

Page 1

... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 100 Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25° 0.1 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 4 6.0V VGS=5. [A] Typical Output Characteristics ID=f(VDS):80µ ...

Page 3

... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 max. 5.0 4.5 4.0 3.5 min. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Tch [ C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 1n 100p 10p VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG= td(off) td(on ...

Page 4

... Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25 C,Vcc=50V Single Pulse http://www.fujielectric.co.jp/denshi/scd [sec ...

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