2sk3512-01l Fuji Electric holdings CO.,Ltd, 2sk3512-01l Datasheet

no-image

2sk3512-01l

Manufacturer Part Number
2sk3512-01l
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK3512-01L.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK3512-01L
Manufacturer:
FUJITSU
Quantity:
12 500
*1 L=2.77mH, Vcc=50V
*4VDS=500V
2SK3512-01L,S,SJ
Super FAP-G Series
FUJI POWER MOSFET
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
<
off
on
*2 Tch=150°C
<
c
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
*3 I
DS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
F
<
=-I
*4
D
, -di/dt=50A/µs, Vcc=BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=2.77mH T
I
I
-di/dt=100A/µs
V
V
V
V
R
V
I
I
channel to ambient
D
D
D
F
F
channel to case
D
D
DS
GS
GS
+150
DS
DS
CC
GS
GS
CC
=12A V
=12A V
=250 µ A
= 250 µ A
GS
=12A
=6A
=6A
500
±12
±48
±30
217
=500V V
=400V V
=25V
=0V
=10
=10V
12
20
95
=±30V
=300V I
=10V
=250V
5
1.67
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
<
V
ch
=0V T
D
=0V
=10V
=25V
DS
GS
GS
V
=6A
V
=25°C
DSS
DS
GS
=0V
=0V
=0V
T
=V
=0V
ch
, Tch=150°C
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
GS
mJ
V
A
A
V
A
=25°C
<
T
T
ch
ch
=125°C
=25°C
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
12
3.0
5.5
1200
Typ.
Typ.
140
10
17
15
34
30
10
P4
11
11
0.40
6.0
7
1.00
0.7
4.5
Source(S)
Drain(D)
1800
Max.
75.0
Max.
250
100
210
1.32
25
26
23
51
45
16.5
15
11
5.0
0.52
9.0
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

Related parts for 2sk3512-01l

Image
Part Number
Description
Manufacturer
Datasheet
Request R
6DI15A-050
Part Number:
6DI15A-050
Description:
POWER TRANSISTOR MODULE
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6DI15A-050.pdf (3 pages)
6DI15S-050
Part Number:
6DI15S-050
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6DI15S-050.pdf (3 pages)
2DI30Z-100
Part Number:
2DI30Z-100
Description:
POWER TRANSISTOR MODULE
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
2DI30Z-100.pdf (3 pages)
ESAG01-01D
Part Number:
ESAG01-01D
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
ESAG01-01D.pdf (2 pages)
6MBI8L-120
Part Number:
6MBI8L-120
Description:
IGBT(1200V 8A)
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6MBI8L-120.pdf (3 pages)
EVK71-050
Part Number:
EVK71-050
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
EVK71-050.pdf (4 pages)
6MBI15L-120
Part Number:
6MBI15L-120
Description:
IGBT MODULE(1200V 15A)
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6MBI15L-120.pdf (3 pages)
EVG31-050A
Part Number:
EVG31-050A
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
EVG31-050A.pdf (3 pages)
2MBI400N-060
Part Number:
2MBI400N-060
Description:
IGBT(600V,400A)
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
2MBI400N-060.pdf (4 pages)
2MBI150SC-120
Part Number:
2MBI150SC-120
Description:
IGBT MODULE ( S-Series )
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
2MBI150SC-120.pdf (4 pages)
2MBI150UB-120
Part Number:
2MBI150UB-120
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
2MBI150UB-120.pdf (4 pages)
6RI100E-080
Part Number:
6RI100E-080
Description:
POWER DIODE MODULE
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6RI100E-080.pdf (2 pages)
6DI30M-050
Part Number:
6DI30M-050
Description:
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6DI30M-050.pdf (3 pages)
6MBI20F-060
Part Number:
6MBI20F-060
Description:
IGBT(600V 20A)
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
6MBI20F-060.pdf (3 pages)
1MBI600PX-140
Part Number:
1MBI600PX-140
Description:
IGBT MODULE
Manufacturer:
Fuji Electric holdings CO.,Ltd
Datasheet:
1MBI600PX-140.pdf (4 pages)

2sk3512-01l Summary of contents

Page 1

... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 125 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...

Page 3

... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 max. 0.7 0.6 typ. 0.5 0.4 0.3 0.2 0.1 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25° Vcc= 120V 18 300V 16 480V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...

Page 4

... Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=50V Single Pulse Outline Drawings (mm) Type(L) FUJI POWER MOS FET See Note: 1. ...

Related keywords