2sk3516-01l Fuji Electric holdings CO.,Ltd, 2sk3516-01l Datasheet
2sk3516-01l
Manufacturer Part Number
2sk3516-01l
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK3516-01L.pdf
(4 pages)
2SK3516-01L,S,SJ
Super FAP-G Series
*1 L=2.85mH, Vcc=45V, See to Avalanche Energy Graph
FUJI POWER MOSFET
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
=25°C unless otherwise specified)
, Tch 150°C
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
Symbol
ch
stg
AS
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
*1
*4
*2
*3
Absolute maximum ratings
*4 VDS 450V
Ratings
-55 to +150
Test Conditions
V
V
R
*2 Tch 150°C
Test Conditions
I
I
V
V
V
I
I
V
V
f=1MHz
V
I
V
L=2.85mH T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
CC
GS
+150
GS
DS
DS
GS
DS
GS
CC
GS
=8A V
=8A V
< =
= 250 µ A
= 250 µ A
=4A
=4A
=8A
450
±10
±40
±30
155.3
135
=300V I
=10V
=10
10
20
=450V V
=360V V
=±30V
=25V
=0V
=10V
=225V
5
1.67
= <
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
=0V T
=0V
V
ch
=10V
=25V
D
DS
GS
GS
=4A
V
V
=25°C
DS
GS
=0V
=0V
=0V
T
=V
=0V
ch
ch
kV/µs
kV/µs
W
°C
°C
=25°C
Unit
=25°C
mJ
V
A
A
V
A
GS
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
450
10
3.0
4
Typ.
Typ.
800
120
10
15
12
25
22
P4
0.50
8
4.5
7
9.5
6.5
1.00
0.7
3.5
Source(S)
Drain(D)
1200
Max.
250
100
150
75.0
Max.
25
23
18
38
33
14.5
10
11
0.926
5.0
0.65
7
1.50
Units
Units
200303
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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2sk3516-01l Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc) 150 125 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V 2.0 1.5 1.0 max. 0.5 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=8A, Tch=25° Vcc= 90V 18 225V 16 360V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current vs Pulse width I =f(t ):starting Tch=25 C,Vcc=45V Single Pulse Outline Drawings (mm) Type( ...