2sk3510 Renesas Electronics Corporation., 2sk3510 Datasheet
2sk3510
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2sk3510 Summary of contents
Page 1
... N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance 8.5 m MAX DS(on) GS Low 8500 pF TYP. iss iss Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage (V ...
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... F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D15687EJ1V0DS 2SK3510 MIN. TYP. MAX. UNIT 2.0 3.0 4 6.5 8.5 m 8500 pF 1300 pF 650 105 ns ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 125 100 100 Channel to Ambient R th(ch-A) Channel to Case R th(ch- 100 Pulse Width - s Data Sheet D15687EJ1V0DS 2SK3510 100 125 150 175 T - Case Temperature - 83.3˚C/W = 1.0˚C/W Single Pulse 100 1000 3 ...
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... 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 P ulse Data Sheet D15687EJ1V0DS 2SK3510 = 150 C A 75°C 25°C 55° Gate to Source Voltage - ° ° ...
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... 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT Data Sheet D15687EJ1V0DS 2SK3510 ...
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... L - Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 0 V 120 100 Starting T Data Sheet D15687EJ1V0DS 2SK3510 100 125 150 - Starting Channel Temperature - C ch ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15687EJ1V0DS 2SK3510 4.8 MAX. 1.3±0.2 2.8±0.2 0.5±0.2 1 ...
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... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3510 The M8E 00. 4 ...