irfh5303pbf International Rectifier Corp., irfh5303pbf Datasheet

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irfh5303pbf

Manufacturer Part Number
irfh5303pbf
Description
Hexfet? Power Mosfet Vds Rds On Max
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Notes  through
Features
Orderable part number
IRFH5303TRPBF
IRFH5303TR2PBF
Applications
V
V
I
I
I
I
I
P
P
T
T
Features and Benefits
Low charge (typical 15nC)
Low R
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Absolute Maximum Ratings
D
D
D
D
DM
J
STG
DS
GS
D
D
Control MOSFET for high frequency buck converters
@ T
@ T
@ T
@ T
@T
@ T
A
A
C(Bottom)
C(Bottom)
(@T
A
g
C(Bottom)
= 25°C
= 70°C
= 25°C
(typical 0.6 Ω)
(@V
R
R
Q
c(Bottom)
DS(on) max
G (typical)
g (typical)
= 25°C
= 100°C
GS
V
= 25°C
I
DS
D
= 10V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Package Type
4.2
0.6
30
15
82
g
g
Parameter
m
g
nC
A
V
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
Standard Pack
results in Increased Power Density
IRFH5303PbF
Benefits
HEXFET
Quantity
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
-55 to + 150
4000
400
0.029
Max.
± 20
330
3.6
30
23
18
82
52
46
®
PQFN 5X6 mm
Power MOSFET
PD -
Note
Units
W/°C
97467
°C
W
V
A
1
3/16/10

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irfh5303pbf Summary of contents

Page 1

... Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V 97467 PD - IRFH5303PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Switching Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

TOP 100 BOTTOM 10 1 2.8V ≤ 60μs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C ...

Page 4

150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 ...

Page 5

125° 25° Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 7

PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER ...

Page 8

PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher ...

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