irfh5302dpbf

Manufacturer Part Numberirfh5302dpbf
DescriptionHexfet? Power Mosfet
ManufacturerInternational Rectifier Corp.
irfh5302dpbf datasheet
 
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V
30
DS
R
DS(on) max
2.5
(@V
= 10V)
GS
V
SD max
0.65
(@I
= 5.0A)
S
t
19
rr (typical)
I
D
100
(@T
= 25°C)
c(Bottom)
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRFH5302DTRPBF
PQFN 5mm x 6mm
IRFH5302DTR2PBF
PQFN 5mm x 6mm
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Continuous Drain Current, V
I
@ T
= 25°C
D
C(Bottom)
Continuous Drain Current, V
I
@ T
= 100°C
D
C(Bottom)
Pulsed Drain Current
I
DM
Power Dissipation
P
@T
= 25°C
D
A
Power Dissipation
P
@T
= 25°C
D
C(Bottom)
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Notes  through
are on page 8
www.irf.com
V
mΩ
V
ns
A
results in Increased Power Density
Standard Pack
Form
Tape and Reel
Tape and Reel
Parameter
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
c
g
g
g
IRFH5302DPbF
®
HEXFET
Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
Quantity
4000
400
Max.
Units
30
V
± 20
29
23
A
100
100
400
3.6
W
104
0.83
W/°C
-55 to + 150
°C
04/01/2010
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