irfh5302dpbf International Rectifier Corp., irfh5302dpbf Datasheet

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irfh5302dpbf

Manufacturer Part Number
irfh5302dpbf
Description
Hexfet? Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Applications
Features and Benefits
Features
V
V
I
I
I
I
I
P
P
T
T
Low RDSon (<2.5mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Absolute Maximum Ratings
Notes  through
D
D
D
D
DM
J
STG
DS
GS
D
D
Synchronous MOSFET for high frequency buck converters
@ T
@ T
@ T
@ T
@T
@T
(@T
IRFH5302DTR2PBF
A
A
C(Bottom)
C(Bottom)
A
C(Bottom)
IRFH5302DTRPBF
= 25°C
= 70°C
= 25°C
(@V
(@I
R
c(Bottom)
t
V
DS(on) max
rr (typical)
SD max
GS
S
V
= 25°C
= 100°C
= 25°C
= 5.0A)
I
DS
D
= 10V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
100
0.65
2.5
30
19
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
mΩ
ns
V
V
A
g
g
Parameter
c
g
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
results in Increased Power Density
Standard Pack
IRFH5302DPbF
Benefits
-55 to + 150
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
HEXFET
Max.
0.83
± 20
100
100
400
104
3.6
30
29
23
Quantity
4000
400
®
Power MOSFET
PQFN 5X6 mm
Note
Units
04/01/2010
W/°C
°C
W
V
A
1

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