irfh5306pbf International Rectifier Corp., irfh5306pbf Datasheet

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irfh5306pbf

Manufacturer Part Number
irfh5306pbf
Description
Hexfet? Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
Applications
Features and Benefits
Features
Notes  through
www.irf.com
V
V
I
I
I
I
I
P
P
T
T
Orderable part number
IRFH5306TRPBF
IRFH5306TR2PBF
Absolute Maximum Ratings
Low charge (typical 7.8nC)
Low thermal resistance to PCB (< 4.9°C/W)
100% Rg tested
Low profile (< 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
D
D
D
D
DM
J
STG
DS
GS
D
D
@ T
@ T
@ T
@ T
Control MOSFET for buck converters
@T
@ T
A
A
C(Bottom)
C(Bottom)
A
(@T
C(Bottom)
= 25°C
= 70°C
= 25°C
(@V
R
R
Q
c(Bottom)
DS(on) max
G (typical)
= 25°C
= 100°C
g (typical)
= 25°C
GS
V
I
DS
D
= 10V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Package Type
8.1
7.8
1.4
30
44
g
g
Parameter
c
g
mΩ
nC
A
V
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
results in Increased power density
Standard Pack
Lower switching losses
Increased power density
Increased reliability
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Benefits
IRFH5306PbF
HEXFET
Quantity
-55 to + 150
4000
400
0.029
Max.
±20
3.6
30
15
13
44
28
60
26
®
PQFN 5X6 mm
Power MOSFET
Note
Units
W/°C
°C
W
V
A
10/08/09
1

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irfh5306pbf Summary of contents

Page 1

... Form Tape and Reel Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V IRFH5306PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower switching losses Increased power density Increased reliability ⇒ Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Note Quantity ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS /∆T ∆ΒV Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 15V ≤60µs ...

Page 4

150° 0.1 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T C ...

Page 5

25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V 0.01 Ω ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 7

PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER Note: For the most current drawing please refer to IR website at: www.irf.com XXXX ...

Page 8

PQFN 5x6 Outline "B" Tape and Reel Qualification information † Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have ...

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