irfh5302pbf

Manufacturer Part Numberirfh5302pbf
Description30v Single N-channel Hexfet Power Mosfet In A Pqfn 5x6mm Package
ManufacturerInternational Rectifier Corp.
irfh5302pbf datasheet
 


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V
DS
R
DS(on) max
(@V
= 10V)
GS
Q
g (typical)
R
G (typical)
I
D
100
(@T
= 25°C)
c(Bottom)
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Synchronous MOSFET for buck converters
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
( ≤ 2.1m Ω)
Low R
DSon
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRFH5302TRPBF
PQFN 5mm x 6mm
IRFH5302TR2PBF
PQFN 5mm x 6mm
Absolute Maximum Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
@ T
= 25°C
Continuous Drain Current, V
D
C(Bottom)
I
@ T
= 100°C
Continuous Drain Current, V
D
C(Bottom)
Pulsed Drain Current
I
DM
Power Dissipation
P
@T
= 25°C
D
A
Power Dissipation
P
@ T
= 25°C
D
C(Bottom)
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Notes  through
are on page 8
www.irf.com
30
V
2.1
29
nC
Ω
1.6
A
results in Increased Power Density
Standard Pack
Form
Tape and Reel
Tape and Reel
Parameter
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
g
g
g
IRFH5302PbF
®
HEXFET
Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
Quantity
4000
400
Max.
Units
30
V
± 20
32
26
h
100
A
h
100
400
3.6
W
100
0.029
W/°C
-55 to + 150
°C
1
10/20/09

irfh5302pbf Summary of contents

  • Page 1

    ... Form Tape and Reel Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V IRFH5302PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Quantity ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

  • Page 3

    TOP 100 BOTTOM 10 1 2.5 V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° ...

  • Page 4

    150°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 LIMITED BY PACKAGE 160 120 ...

  • Page 5

    125°C 3.0 2 25°C 1 Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U ...

  • Page 6

    D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. D DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse ...

  • Page 7

    PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER ...

  • Page 8

    PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher ...