irfz34vs International Rectifier Corp., irfz34vs Datasheet

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irfz34vs

Manufacturer Part Number
irfz34vs
Description
60v Single N-channel Hexfet Power Mosfet In A D2-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ34VS
Manufacturer:
IR
Quantity:
12 500
l
l
l
l
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Absolute Maximum Ratings
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
www.irf.com
Thermal Resistance
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
@T
2
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 100°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Power MOSFETs from International
Parameter
Parameter

2
Pak is suitable for
…
ƒ…
GS
GS

@ 10V
@ 10V
G
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
-55 to + 175
S
D
IRFZ34VS
Max.
D
0.46
120
± 20
7.0
4.5
30
21
70
30
2
Pak
®
R
Power MOSFET
IRFZ34VS
DS(on)
Max.
IRFZ34VL
V
2.15
40
DSS
I
D
= 30A
IRFZ34VL
TO-262
PD - 94180
= 60V
= 28m
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
02/14/02
1

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irfz34vs Summary of contents

Page 1

... Typ 94180 IRFZ34VS IRFZ34VL ® HEXFET Power MOSFET 60V DSS R = 28m DS(on 30A Pak TO-262 IRFZ34VS IRFZ34VL Max. Units 120 70 W 0.46 W/°C ± 7.0 mJ 4.5 V/ns - 175 °C Max. Units ––– ...

Page 2

... IRFZ34VS/IRFZ34VL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics 1000  ° 100 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFZ34VS/IRFZ34VL  1000 TOP BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 3 3.0 2.5  ° 175 ...

Page 4

... IRFZ34VS/IRFZ34VL  2000 1MHz iss rss 1600 oss iss 1200 800  C oss 400  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100  T = 175 C ° ° ...

Page 5

... Case Temperature 0.50 1 0.20 0.10 0.05  0.02 0.1 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFZ34VS/IRFZ34VL R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms ...

Page 6

... IRFZ34VS/IRFZ34VL 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 160 120 + ...

Page 7

... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRFZ34VS/IRFZ34VL Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" ...

Page 8

... IRFZ34VS/IRFZ34VL 2 D Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRFZ34VS/IRFZ34VL 9 ...

Page 10

... IRFZ34VS/IRFZ34VL Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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