irf550a Fairchild Semiconductor, irf550a Datasheet

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irf550a

Manufacturer Part Number
irf550a
Description
Advanced Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Symbol
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
Lower Leakage Current : 10 A (Max.) @ V
Lower R
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
DSS
AR
D
GS
AS
AR
CS
JC
JA
D
L
C
STG
Operating Temperature
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.032
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
Case-to-Sink
C
=25 )
C
C
=25 )
=100 )
C
DS
C
= 100V
C
O
O
O
O
O
1
1
1
2
3
Typ.
0.5
--
--
- 55 to +175
Value
+ _
300
28.3
16.7
1.11
100
160
640
167
BV
R
I
6.5
1
40
40
2
D
TO-220
1.Gate 2. Drain 3. Source
3
20
DS(on)
DSS
= 40 A
IRF550A
62.5
Max.
0.9
--
= 0.04
= 100 V
Units
Units
W/
C
V/ns
mJ
mJ
W
V
A
A
V
A
/W
C
C
Rev. B

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irf550a Summary of contents

Page 1

... Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation IRF550A BV DSS R DS(on TO-220 = 100V 1.Gate 2. Drain 3. Source Value 100 ...

Page 2

... IRF550A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... V , Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage Total Gate Charge [nC] G IRF550A @ Notes : 250 s Pulse Test ...

Page 4

... IRF550A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 @ Notes : 0.8 -75 -50 - 100 125 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area 3 10 Operation in This Area is Limited by R DS(on Notes : 175 Single Pulse - ...

Page 5

... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRF550A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time t p ...

Page 6

... IRF550A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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