irfb7416 International Rectifier Corp., irfb7416 Datasheet

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irfb7416

Manufacturer Part Number
irfb7416
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
I
I
I
P
V
E
dv/dt
T
D
D
DM
J,
D
GS
AS
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
STG
A
A
A
R
= 25°C
= 70°C
= 25°C
JA
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ - 10V
@ -10V
G
S
S
S
1
2
3
4
T op V ie w
Typ.
–––
-55 to + 150
8
7
6
5
HEXFET
0.02
Max.
-7.1
-5.0
± 20
370
-10
-45
2.5
D
D
D
D
A
S O -8
®
Max.
R
IRF7416
50
Power MOSFET
DS(on)
V
DSS
PD - 9.1356D
= -30V
= 0.02
mW/°C
Units
V/ns
mJ
°C
V
Units
W
°C/W
A
8/25/97

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irfb7416 Summary of contents

Page 1

Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...

Page 2

IRF7416 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT µ LSE W IDTH ° ...

Page 4

IRF7416 rss oss ...

Page 5

Q G -10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . -3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...

Page 6

IRF7416 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Peak Diode Recovery dv/dt Test Circuit + D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...

Page 8

IRF7416 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...

Page 9

Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ILLIM DIM ...

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