irfp90n20d International Rectifier Corp., irfp90n20d Datasheet

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irfp90n20d

Manufacturer Part Number
irfp90n20d
Description
200v Single N-channel Hexfet Power Mosfet In A To-247ac Package
Manufacturer
International Rectifier Corp.
Datasheet

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l
l
l
l
Thermal Resistance
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
Notes
I
I
I
P
V
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JC
CS
JA
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses

C
C
C
= 25°C
= 100°C
= 25°C
through
OSS
o
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
to Simplify Design, (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
Typ.
300 (1.6mm from case )
0.24
–––
–––
10 lbf•in (1.1N•m)
IRFP90N20D
HEXFET
-55 to + 175
R
Max.
380
580
± 30
3.8
6.7
94
DS(on)
66
o
0.023
®
Power MOSFET
TO-247AC
Max.
0.26
max
–––
40
PD - 94301A
94A
Units
Units
W/°C
°C/W
V/ns
°C
W
I
A
V
D
1
o
09/27/01

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irfp90n20d Summary of contents

Page 1

... Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA  o Notes through are on page 8 www.irf.com SMPS MOSFET IRFP90N20D HEXFET V DSS 200V @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.24 ––– ...

Page 2

... IRFP90N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... BOTTOM 5.0V 5. 0.1 10 100 Fig 2. Typical Output Characteristics 3 3 175°C 2.5 2.0 1.5 1.0 0.5 0.0 13.0 15.0 -60 -40 Fig 4. Normalized On-Resistance IRFP90N20D VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 94A  V = 10V GS - 100 120 140 160 180 ° ...

Page 4

... IRFP90N20D 1000000 0V, C iss = rss = C gd 100000 C oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000. 175°C 100. 25°C 10.00 1.00 0.10 0.0 0.5 1.0 1 Source-toDrain Voltage (V) Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP90N20D D.U. 10V Pulse Width µs Duty Factor ...

Page 6

... IRFP90N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 2100 ...

Page 7

... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFP90N20D + =10V ...

Page 8

... IRFP90N20D TO - 247 Package Outline Dimensions are shown in millimeters (inches) 15.90 (.6 26) 15.30 (.6 02 0.30 (. 9.70 (. 4.80 (.583 ) 1 4.20 (.559 ) 2 .40 (.094) 1 .40 (.056 ) 2 .00 (.079 .00 (.039 ) .25 (.010 ) M 5.45 (.21 5) 3.4 0 (.1 33 3.0 0 (.1 18) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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