irfpc60lc-p International Rectifier Corp., irfpc60lc-p Datasheet

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irfpc60lc-p

Manufacturer Part Number
irfpc60lc-p
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
HEXFET
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Description
www.irf.com
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs
achieve significantly lower gate charge over conventional MOSFETs. Utilizing
advanced Hexfet technology the device improvements allow for reduced gate
drive requirements, faster switching speeds and increased total system savings.
These device improvements combined with the proven ruggedness and reliability
of HEXFETs offer the designer a new standard in power transistors for switching
applications.
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
D
GS
AS
AR
JC
CS
JA
@ T
@ T
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
Reduced C
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFET
iss
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Peak Diode Recovery dv/dt ƒ
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
, C
oss
gs
, C
Rating
rss
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Min.
––––
––––
––––
IRFPC60LC-P
-55 to + 150
Max.
D
S
1000
280
±30
225
Typ.
2.2
3.0
––––
––––
0.24
16
10
64
16
28
V
R
I
D
DSS
DS(on)
Surface Mountable
= 16A
Max.
––––
0.45
PD - 99438
= 600V
TO-247
40
= 0.40
04/25/02
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
1

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