irfp2410

Manufacturer Part Numberirfp2410
DescriptionHexfet Power Mosfet
ManufacturerInternational Rectifier Corp.
irfp2410 datasheet
 


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HEXFET
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
Preliminary Data Sheet PD - 9.1251
IRFP2410
Max.
@ 10V
61
GS
@ 10V
43
GS
240
230
1.5
±20
830
37
23
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
Typ.
––––
––––
––––
0.24
––––
––––
V
= 100V
DSS
R
= 0.025
DS(on)
I
= 61A
D
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Max.
Units
0.65
––––
°C/W
40
Revision 0

irfp2410 Summary of contents

  • Page 1

    ... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA Preliminary Data Sheet PD - 9.1251 IRFP2410 Max. @ 10V 10V 43 GS 240 230 1.5 ±20 830 37 23 5.5 - 175 300 (1 ...

  • Page 2

    ... IRFP2410 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... TOP BOTTOM 4.5V 100 4. 100 0.01 Fig 2. Typical Output Characteristics, 3 61A D 2.5 2 175°C J 1.5 1.0 0.5 0.0 A -60 -40 - Fig 4. Normalized On-Resistance IRFP2410 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH T = 175° Drain-to-Source Voltage ( 175 10V ...

  • Page 4

    ... IRFP2410 8000 1MHz iss rss oss ds gd 6000 C iss 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 25°C J 100 10 0.0 1.0 2.0 3 Source-to-Drain Voltage (V) SD Fig 7 ...

  • Page 5

    ... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit A 150 175 Fig 10b. Switching Time Waveforms N otes : uty fac tor 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP2410 D.U. µ ...

  • Page 6

    ... IRFP2410 10 V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 10 V Fig 13a. Basic Gate Charge Waveform 2000 TOP BOTTOM 1600 1200 800 400 V = 25V 100 125 Starting T , Junction Temperature (°C) J Fig 12c. Maximum Avalanche Energy Vs ...

  • Page 7

    ... Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations D.U.T Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFP2410 ...

  • Page 8

    ... IRFP2410 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079 0.25 (.010) M 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) Part Marking Information TO-247AC EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave ...