irf650b Fairchild Semiconductor, irf650b Datasheet
irf650b
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irf650b Summary of contents
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... IRF650B / IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode ...
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... 32A, di/dt 300A DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C D ...
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... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 8000 6000 C iss 4000 C oss C 2000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 150 Notes : 1. 250 s Pulse Test 25 Figure 2. Transfer Characteristics 2 ...
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... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF650B 100 , Case Temperature [ ] T C Figure 10. Maximum Drain Current vs Case Temperature ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2 ...
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... Typical Characteristics Figure 11. Transient Thermal Response Curve for IRF650B Figure 11. Transient Thermal Response Curve for IRFS650B © ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...
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... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...
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... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A1, December 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...