irf610a Fairchild Semiconductor, irf610a Datasheet
irf610a
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irf610a Summary of contents
Page 1
... Maximum Lead Temp. for Soldering T L Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation IRF610A BV DSS R DS(on 3 TO-220 = 200V 1.Gate 2. Drain 3. Source Value 200 ...
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... IRF610A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... SD Fig 6. Gate Charge vs. Gate-Source Voltage = Total Gate Charge [nC] G IRF610A @ Notes : 250 s Pulse Test ...
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... IRF610A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 @ Notes : 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 10 Operation in This Area is Limited by R DS(on Notes : - 150 Single Pulse - Drain-Source Voltage [V] DS D=0 ...
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... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRF610A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time t p ...
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... IRF610A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- Gate Pulse Period ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...